Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers

2013 ◽  
Vol 103 (6) ◽  
pp. 063109 ◽  
Author(s):  
Jiadan Lin ◽  
Jianqiang Zhong ◽  
Shu Zhong ◽  
Hai Li ◽  
Hua Zhang ◽  
...  
2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...


2020 ◽  
Vol 78 ◽  
pp. 105605 ◽  
Author(s):  
Xiao Liu ◽  
Xiaolu Su ◽  
Clément Livache ◽  
Lise-Marie Chamoreau ◽  
Sébastien Sanaur ◽  
...  

2008 ◽  
Vol 7 (4) ◽  
pp. 500-508 ◽  
Author(s):  
Li-Na Zhao ◽  
Xue-Feng Wang ◽  
Zhen-Hua Yao ◽  
Zhu-Feng Hou ◽  
Marcus Yee ◽  
...  

2020 ◽  
Vol 8 (48) ◽  
pp. 17297-17306
Author(s):  
Anna Pachariyangkun ◽  
Masayuki Suda ◽  
Sarinya Hadsadee ◽  
Siriporn Jungsuttiwong ◽  
Phattananawee Nalaoh ◽  
...  

This study determines that furan could display comparable charge transport properties to its thiophene analogue. The OFET device employing furan-substituted benzothiadiazole as the channel layer showed a mobility (μmax) of 0.0122 cm2 V−1 s−1.


Sign in / Sign up

Export Citation Format

Share Document