scholarly journals Reconstructing focused ion beam current density profile by iterative simulation methodology

Author(s):  
Eddie Chang ◽  
Kevin Toula ◽  
Valery Ray
2007 ◽  
Author(s):  
Xiaowei Zhou ◽  
Dequan Xu ◽  
Ying Liu ◽  
Xiangdong Xu ◽  
Shaojun Fu

2019 ◽  
Vol 28 (6) ◽  
pp. 065010
Author(s):  
Yoichi Hirano ◽  
Yutaka Fujiwara ◽  
Satoru Kiyama ◽  
Yamato Adachi ◽  
Hajime Sakakita

2016 ◽  
Vol 155 ◽  
pp. 19-24 ◽  
Author(s):  
Yuval Greenzweig ◽  
Yariv Drezner ◽  
Shida Tan ◽  
Richard H. Livengood ◽  
Amir Raveh

1998 ◽  
Vol 69 (11) ◽  
pp. 3828-3834 ◽  
Author(s):  
J. G. Schwelberger ◽  
T. P. Crowley ◽  
K. A. Connor ◽  
P. M. Schoch

2009 ◽  
Vol 16 (5) ◽  
pp. 056701 ◽  
Author(s):  
A. B. Sefkow ◽  
R. C. Davidson ◽  
E. P. Gilson ◽  
I. D. Kaganovich ◽  
A. Anders ◽  
...  

1990 ◽  
Vol 181 ◽  
Author(s):  
Khanh Q. Tran ◽  
Yuuichi Madokoro ◽  
Tohru Ishitani ◽  
Cary Y. Yang

ABSTRACT30-keV focused Ga+ ion beam was used for induced deposition of small-area tungsten thin films from W(CO)6 on Si and SiO2. Deposition yield, calculated assuming pure tungsten depositions, depends on dwell time (beam diameter/scan speed) and beam current density. High current density and/or long dwell time are known to cause low deposition yield because of the depletion of adsorbed gas molecules during ion beam irradiation. Based on a model taking this effect into account, numerical fitting was carried out. The reaction cross-section was estimated to be 1.4 × 10−14 cm2. For doses below 1017 ions/cm2, film resistivity decreases with increasing dose. This was confirmed for several dwell times. However, for doses above 1017 ions/cm2, film resistivity remains independent of dose. In this “high”-dose range, variation of beam current density has little effect on film resistivity. AES analyses revealed a consistency between film composition and resistivity. For a “high”-dose film with a resistivity of 190 μΩ-cm, the approximate tungsten content was 50 at%.


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