Fabrication and pixel characterization of a row-column addressable 128 × 128 InAs/GaSb type-II superlattice midwave infrared photodiode array

2017 ◽  
Vol 35 (6) ◽  
pp. 061207
Author(s):  
Sona Das ◽  
Utpal Das
Keyword(s):  
Type Ii ◽  
Type Ii Superlattice ◽  
Infrared Photodiode ◽  
Midwave Infrared ◽  
Photodiode Array

scholarly journals Fabrication and Characterization of an InAs(Sb)/In x Ga 1− x As y Sb 1− y Type‐II Superlattice

2019 ◽  
Vol 13 (12) ◽  
pp. 1970045
Author(s):  
Peng Du ◽  
Xuan Fang ◽  
Qian Gong ◽  
Jiaming Li ◽  
Xufeng Kou ◽  
...  
Keyword(s):  
Type Ii ◽  
Type Ii Superlattice ◽  
Fabrication And Characterization

Demonstration of Fabricated Midwave Infrared InAs/GaSb Type-II Superlattice-based Focal Plane Arrays

2017 ◽  
Vol 67 (2) ◽  
pp. 149 ◽  
Author(s):  
K.C. Goma Kumari ◽  
H.M. Rawool ◽  
S. Chakrabarti
Keyword(s):  
Low Temperature ◽  
Focal Plane ◽  
Spectral Response ◽  
Low Noise ◽  
Focal Plane Arrays ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
Pixel Detectors ◽  
Midwave Infrared ◽  
Single Pixel

In this study, fabricated 320 × 256 infrared focal plane arrays (FPAs) were realised using a GaSb/InAs-based type-II superlattice heterostructure for midwave infrared (MWIR) imaging. We report here the optimized fabrication and characterization of single-pixel infrared detectors and FPAs. MWIR spectral response up to 5 μm of these single-pixel detectors was evident up to 250 K. Responsivity was measured to be 1.62 A/W at 0.8 V and 80 K. Current–voltage characteristics at room temperature (300 K) and at low temperature (18 K) revealed the resistance and dark current variation of the device in the operating bias region. Moreover, good thermal images were obtained at device temperatures up to 150 K for low-temperature targets. Low noise equivalent difference in temperature was measured to be 58 mK at 50 K and 117 mK at 120 K.

Growth and electrical characterization of type II InAs/GaSb superlattices for midwave infrared detection

2014 ◽  
Vol 65 ◽  
pp. 129-133 ◽  
Author(s):  
Lixue Zhang ◽  
Weiguo Sun ◽  
Yingqiang Xu ◽  
Lei Zhang ◽  
Liang Zhang ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Infrared Detection ◽  
Type Ii ◽  
Midwave Infrared

Fabrication and Characterization of an InAs(Sb)/In x Ga 1− x As y Sb 1− y Type‐II Superlattice

2019 ◽  
Vol 13 (12) ◽  
pp. 1900474 ◽  
Author(s):  
Peng Du ◽  
Xuan Fang ◽  
Qian Gong ◽  
Jiaming Li ◽  
Xufeng Kou ◽  
...  
Keyword(s):  
Type Ii ◽  
Type Ii Superlattice ◽  
Fabrication And Characterization
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