Low‐energy (∼100 eV) ion irradiation during growth of TiN deposited by reactive magnetron sputtering: Effects of ion flux on film microstructure

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.577428 ◽

1991 ◽

Vol 9 (3) ◽

pp. 434-438 ◽

Author(s):

L. Hultman ◽

W.‐D. Münz ◽

J. Musil ◽

S. Kadlec ◽

I. Petrov ◽

...

Keyword(s):

Magnetron Sputtering ◽

Ion Irradiation ◽

Ion Flux ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

Film Microstructure

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Effects of high‐flux low‐energy (20–100 eV) ion irradiation during deposition on the microstructure and preferred orientation of Ti0.5Al0.5N alloys grown by ultra‐high‐vacuum reactive magnetron sputtering

Journal of Applied Physics ◽

10.1063/1.353388 ◽

1993 ◽

Vol 73 (12) ◽

pp. 8580-8589 ◽

Author(s):

F. Adibi ◽

I. Petrov ◽

J. E. Greene ◽

L. Hultman ◽

J.‐E. Sundgren

Keyword(s):

Magnetron Sputtering ◽

Ion Irradiation ◽

High Vacuum ◽

Preferred Orientation ◽

Reactive Magnetron Sputtering ◽

Ultra High Vacuum ◽

High Flux ◽

Reactive Magnetron

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Epitaxial growth of metastable δ-TaN layers on MgO(001) using low-energy, high-flux ion irradiation during ultrahigh vacuum reactive magnetron sputtering

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1513639 ◽

2002 ◽

Vol 20 (6) ◽

pp. 2007 ◽

Author(s):

C.-S. Shin ◽

Y.-W. Kim ◽

N. Hellgren ◽

D. Gall ◽

I. Petrov ◽

...

Keyword(s):

Magnetron Sputtering ◽

Epitaxial Growth ◽

Ion Irradiation ◽

Ultrahigh Vacuum ◽

Reactive Magnetron Sputtering ◽

High Flux ◽

Reactive Magnetron

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Low‐energy ion irradiation during film growth for reducing defect densities in epitaxial TiN(100) films deposited by reactive‐magnetron sputtering

Journal of Applied Physics ◽

10.1063/1.338257 ◽

1987 ◽

Vol 61 (2) ◽

pp. 552-555 ◽

Author(s):

L. Hultman ◽

U. Helmersson ◽

S. A. Barnett ◽

J.‐E. Sundgren ◽

J. E. Greene

Keyword(s):

Magnetron Sputtering ◽

Film Growth ◽

Ion Irradiation ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

Defect Densities

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Growth of fullerene-like carbon nitride thin solid films by reactive magnetron sputtering; role of low-energy ion irradiation in determining microstructure and mechanical properties

Journal of Applied Physics ◽

10.1063/1.1538316 ◽

2003 ◽

Vol 93 (5) ◽

pp. 3002-3015 ◽

Author(s):

J. Neidhardt ◽

Zs. Czigány ◽

I. F. Brunell ◽

L. Hultman

Keyword(s):

Mechanical Properties ◽

Magnetron Sputtering ◽

Carbon Nitride ◽

Ion Irradiation ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

Thin Solid Films ◽

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Growth of epitaxial TiN films deposited on MgO(100) by reactive magnetron sputtering: The role of low-energy ion irradiation during deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(88)90048-6 ◽

1988 ◽

Vol 92 (3-4) ◽

pp. 639-656 ◽

Author(s):

L. Hultman ◽

S.A. Barnett ◽

J.-E. Sundgren ◽

J.E. Greene

Keyword(s):

Magnetron Sputtering ◽

Ion Irradiation ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

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Substrate Surface Dependence of the Microstructure of μc-Si,Ge:H Deposited by Reactive Magnetron Sputtering (RMS)

MRS Proceedings ◽

10.1557/proc-405-241 ◽

1995 ◽

Vol 405 ◽

Author(s):

S. M. Cho ◽

K. Christensen ◽

D. Wolfe ◽

H. Ying ◽

D. R. Lee ◽

...

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Substrate Surface ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

X Ray Diffraction ◽

X Ray ◽

Transmission Electron ◽

Film Microstructure ◽

Substrate Surfaces

AbstractWe have investigated on the effect of different substrate surfaces in changing the microstructure of μc-SixGe1-x:H films prepared by reactive magnetron sputtering. Films were deposited on hydrogen terminated Si(111), Si(100) surfaces, and surfaces chemical and plasma oxides. The thin film microstructure was characterized by Fourier transform infrared spectroscopy (FTIR), high resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and Raman scattering.

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Summary Abstract: The role of low‐energy ion bombardment during the growth of epitaxial TiN(100) films by reactive magnetron sputtering: Defect formation and annihilation

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.574946 ◽

1987 ◽

Vol 5 (4) ◽

pp. 2162-2164 ◽

Author(s):

L. Hultman ◽

U. Helmersson ◽

S. A. Barnett ◽

J.‐E. Sundgren ◽

J. E. Greene

Keyword(s):

Magnetron Sputtering ◽

Defect Formation ◽

Ion Bombardment ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron

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Development of preferred orientation in polycrystalline NaCl-structure δ-TaN layers grown by reactive magnetron sputtering: Role of low-energy ion surface interactions

Journal of Applied Physics ◽

10.1063/1.1510558 ◽

2002 ◽

Vol 92 (9) ◽

pp. 5084-5093 ◽

Author(s):

C.-S. Shin ◽

D. Gall ◽

Y.-W. Kim ◽

N. Hellgren ◽

I. Petrov ◽

...

Keyword(s):

Magnetron Sputtering ◽

Surface Interactions ◽

Preferred Orientation ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron

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High‐flux low‐energy (≂20 eV) N+2ion irradiation during TiN deposition by reactive magnetron sputtering: Effects on microstructure and preferred orientation

Journal of Applied Physics ◽

10.1063/1.359720 ◽

1995 ◽

Vol 78 (9) ◽

pp. 5395-5403 ◽

Author(s):

L. Hultman ◽

J.‐E. Sundgren ◽

J. E. Greene ◽

D. B. Bergstrom ◽

I. Petrov

Keyword(s):

Magnetron Sputtering ◽

Preferred Orientation ◽

Reactive Magnetron Sputtering ◽

High Flux ◽

Reactive Magnetron

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Structure and properties of Ti–Si–N films with ∼10 at.% Si deposited using reactive magnetron sputtering with high-flux low-energy ion assistance

Thin Solid Films ◽

10.1016/j.tsf.2007.11.026 ◽

2008 ◽

Vol 516 (19) ◽

pp. 6548-6552 ◽

Author(s):

Z.G. Li ◽

S. Miyake ◽

M. Makino ◽

Y.X. Wu

Keyword(s):

Magnetron Sputtering ◽

Reactive Magnetron Sputtering ◽

High Flux ◽

Reactive Magnetron ◽

Structure And Properties ◽

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