Study of ion mixing during Auger depth profiling of Ge–Si multilayer system. II. Low ion energy (0.2–2 keV) range

1995 ◽  
Vol 13 (4) ◽  
pp. 1999-2004 ◽  
Author(s):  
M. Menyhard ◽  
A. Barna ◽  
J. P. Biersack ◽  
K. Järrendahl ◽  
J.‐E. Sundgren
Keyword(s):  
Depth Profiling ◽  
Multilayer System ◽  
Ion Energy

Sensitivities of Depth Resolution to Sampling Depth and Sputter Ion Energy in XPS Depth Profiling

PRICM ◽  
2013 ◽  
pp. 3449-3458
Author(s):  
Ji-Feng Ying ◽  
Mingsheng Zhang ◽  
Rong Ji ◽  
Huiqing Xie ◽  
Jack Tsai
Keyword(s):  
Depth Profiling ◽  
Depth Resolution ◽  
Sampling Depth ◽  
Ion Energy

scholarly journals Morphology of PbTe Crystal Surface Sputtered by Argon Plasma under Secondary Neutral Mass Spectrometry Conditions

2016 ◽  
Vol 17 (3) ◽  
pp. 336-341 ◽  
Author(s):  
D.M. Zayachuk ◽  
A. Csik ◽  
V.E. Slynko
Keyword(s):  
Mass Spectrometry ◽  
Crystal Surface ◽  
Depth Profiling ◽  
Argon Plasma ◽  
Surface Structures ◽  
The Other ◽  
Ion Energy ◽  
The One ◽  
Average Size ◽  
Microscopic Surface

We have investigated morphology of the lateral surfaces of PbTe crystal samples grown from melt by the Bridgman method sputtered by Ar+ plasma with ion energy of 50 – 550 eV for 5 - 50 minutes under Secondary Neutral Mass Spectrometry (SNMS) conditions. The sputtered PbTe crystal surface was found to be simultaneously both the source of sputtered material and the efficient substrate for re-deposition of the sputtered material during the depth profiling. During sputtering PbTe crystal surface is forming the dimple relief. To be re-deposited the sputtered Pb and Te form arrays of the microscopic surface structures in the shapes of hillocks, pyramids, cones and others on the PbTe crystal sputtered surface. Correlation between the density of re-deposited microscopic surface structures, their shape, and average size, on the one hand, and the energy and duration of sputtering, on the other, is revealed.

Advanced ion energy loss models: Applications to subnanometric resolution elemental depth profiling

2007 ◽  
Vol 601 (23) ◽  
pp. 5559-5570 ◽  
Author(s):  
R.P. Pezzi ◽  
P.L. Grande ◽  
M. Copel ◽  
G. Schiwietz ◽  
C. Krug ◽  
...  
Keyword(s):  
Energy Loss ◽  
Depth Profiling ◽  
Ion Energy ◽  
Loss Models ◽  
Elemental Depth

Preferential Sputtering of Ni3Al Single Crystals Studied Using Atom-Probe Field-Ion Microscopy and XPS

1981 ◽  
Vol 39 ◽  
pp. 16-17
Author(s):  
M.P. Thomas ◽  
A.R. Waugh ◽  
M.J. Southon ◽  
Brian Ralph
Keyword(s):  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Atom Probe ◽  
Probe Field ◽  
Preferential Sputtering ◽  
Argon Ion Bombardment ◽  
Argon Ion

It is well known that ion-induced sputtering from numerous multicomponent targets results in marked changes in surface composition (1). Preferential removal of one component results in surface enrichment in the less easily removed species. In this investigation, a time-of-flight atom-probe field-ion microscope A.P. together with X-ray photoelectron spectroscopy XPS have been used to monitor alterations in surface composition of Ni3Al single crystals under argon ion bombardment. The A.P. has been chosen for this investigation because of its ability using field evaporation to depth profile through a sputtered surface without the need for further ion sputtering. Incident ion energy and ion dose have been selected to reflect conditions widely used in surface analytical techniques for cleaning and depth-profiling of samples, typically 3keV and 1018 - 1020 ion m-2.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

Credit Crime Detection By Using Multilayer System

2012 ◽  
Vol 2 (7) ◽  
pp. 177-180
Author(s):  
G ANIL KUMAR G ANIL KUMAR ◽  
◽  
D VENKATESH D VENKATESH ◽  
KANTE RAMESH
Keyword(s):  
Multilayer System ◽  
Crime Detection
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