scholarly journals Low-Temperature Deposition of SiC Films by Microwave-Plasma Chemical Vapor Deposition

1994 ◽  
Vol 102 (1181) ◽  
pp. 13-17 ◽  
Author(s):  
Satoshi AOYAMA ◽  
Noriyoshi SHIBATA
2002 ◽  
Vol 742 ◽  
Author(s):  
Mitsuo Okamoto ◽  
Ryoji Kosugi ◽  
Shinichi Nakashima ◽  
Kenji Fukuda ◽  
Kazuo Arai

ABSTRACTHomoepitaxial 4H-SiC film growth has been carried out at temperatures as low as 1000°C on 4H-SiC of Si-face and C-face by microwave plasma chemical vapor deposition method. The extent of step-bunching of those films grown on C-face was low in comparison with that on Si-face, although large and irregular shaped step-bunching was occurred in both films grown on Si-face and C-face. For the first step to application for the electrical devices, the electrical properties of the μPCVD grown films was characterized by fabricating simple pn-junction structure. The obtained SiC films indicated n-type conductivity and the amount of background donor impurities of the films grown on C-face substrates were lower by one order than that on Si-face.


2013 ◽  
Vol 103 (15) ◽  
pp. 153106 ◽  
Author(s):  
Yuki Okigawa ◽  
Kazuo Tsugawa ◽  
Takatoshi Yamada ◽  
Masatou Ishihara ◽  
Masataka Hasegawa

1996 ◽  
Vol 35 (Part 1, No. 9B) ◽  
pp. 5089-5093 ◽  
Author(s):  
Shuji Sone ◽  
Hisato Yabuta ◽  
Yoshitake Kato ◽  
Toshihiro Iizuka ◽  
Shintaro Yamamichi ◽  
...  

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