Atomic‐layer epitaxy by a flux‐interruption and annealing method and the analysis of reflection high‐energy electron diffraction oscillation overshoot in the molecular‐beam epitaxy growth of GaAs
1994 ◽
Vol 137
(1-2)
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pp. 187-194
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1995 ◽
Vol 150
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pp. 1015-1019
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1989 ◽
Vol 40
(17)
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pp. 11799-11803
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1995 ◽
Vol 150
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pp. 117-122
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1985 ◽
Vol 3
(5)
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pp. 1317
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1990 ◽
Vol 105
(1-4)
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pp. 240-243
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1987 ◽
Vol 5
(4)
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pp. 1162
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1990 ◽
Vol 8
(2)
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pp. 997-1001
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Keyword(s):
2006 ◽
Vol 290
(1)
◽
pp. 73-79
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