Summary Abstract: Infrared absorption and low temperature photoluminescence spectra of GaAs grown by MBE

1985 ◽  
Vol 3 (2) ◽  
pp. 622 ◽  
Author(s):  
K. Akimoto
Keyword(s):  
Low Temperature ◽  
Infrared Absorption ◽  
Photoluminescence Spectra ◽  
Low Temperature Photoluminescence

Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 437-440 ◽  
Author(s):  
John W. Steeds
Keyword(s):  
Low Temperature ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Spectra ◽  
Carbon Vacancy ◽  
Low Temperature Photoluminescence

A common set of optical centres found in photoluminescence spectra of electron irradiated 4H SiC is interpreted as originating in neutral carbon-vacancy carbon anti-site pairs.

X, l, and γ lines in low temperature photoluminescence spectra ofal0.47Ga0.53As0.035Sb0.965 alloys

1996 ◽  
Vol 196 (2) ◽  
pp. 453-460
Author(s):  
P. Tronc ◽  
H. Mani ◽  
R. Maciejko ◽  
B. Reid ◽  
M. Leroux ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoluminescence Spectra ◽  
Low Temperature Photoluminescence

Investigation of Roughness at InP/InAs Interfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
M.J.S.P. Brasil ◽  
R. E. Nahory ◽  
M. C. Tamargo ◽  
S. Schwarz
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Mass Spectroscopy ◽  
Growth Temperature ◽  
Interface Roughness ◽  
Chemical Beam Epitaxy ◽  
Photoluminescence Spectra ◽  
Multiple Line ◽  
Secondary Ion ◽  
Low Temperature Photoluminescence

ABSTRACTWe have investigated the interface roughness of single thin InP/InAs quantum wells grown by Chemical Beam Epitaxy. We report results of low temperature photoluminescence and secondary ion mass spectroscopy. The interface roughness is characterized by multiple-line photoluminescence spectra and is very sensitive to parameters such as the growth temperature. Details of the interface roughness are discussed based on the shifts of the excitonic energies observed by photoluminescence.

Low Temperature Photoluminescence Spectra of Ga0.77In0.23As0.19SB0.81 Compounds

1993 ◽  
Vol 180 (2) ◽  
pp. K87-K91 ◽  
Author(s):  
P. Tronc ◽  
B. Reid ◽  
H. Mani ◽  
R. MacIejko ◽  
A. N. Titkov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoluminescence Spectra ◽  
Low Temperature Photoluminescence
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