Investigation of Roughness at InP/InAs Interfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
M.J.S.P. Brasil ◽  
R. E. Nahory ◽  
M. C. Tamargo ◽  
S. Schwarz
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Mass Spectroscopy ◽  
Growth Temperature ◽  
Interface Roughness ◽  
Chemical Beam Epitaxy ◽  
Photoluminescence Spectra ◽  
Multiple Line ◽  
Secondary Ion ◽  
Low Temperature Photoluminescence

ABSTRACTWe have investigated the interface roughness of single thin InP/InAs quantum wells grown by Chemical Beam Epitaxy. We report results of low temperature photoluminescence and secondary ion mass spectroscopy. The interface roughness is characterized by multiple-line photoluminescence spectra and is very sensitive to parameters such as the growth temperature. Details of the interface roughness are discussed based on the shifts of the excitonic energies observed by photoluminescence.

scholarly journals Спектр излучения и стабильность двух типов электронно-дырочной жидкости в мелких Si/Si-=SUB=-1-x-=/SUB=-Ge-=SUB=-x-=/SUB=-Si квантовых ямах

2020 ◽  
Vol 62 (4) ◽  
pp. 529
Author(s):  
А.А. Васильченко ◽  
В.С. Кривобок ◽  
С.Н. Николаев ◽  
В.С. Багаев ◽  
Е.Е. Онищенко ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Density Functional ◽  
Two Dimensional ◽  
Photoluminescence Spectra ◽  
Dimensional Electron ◽  
Electron Hole ◽  
Germanium Content ◽  
Well Design ◽  
Low Temperature Photoluminescence

Abstract Based on calculations within the density functional theory and an analysis of low-temperature photoluminescence spectra, the structure of electron–hole liquid in shallow Si/Si_1 – _ x Ge_ x Si (100) quantum wells 5 nm wide with germanium content x = 3–5.5% is studied. It is shown that the energy of quasi-two-dimensional electron–hole liquid localized in quantum wells for this composition range as a function of carrier concentration exhibits two local minima. The position of the deeper (major) minimum depends on the quantum well design and controls properties of quasi-two-dimensional electron–hole liquid at low temperatures. For the series of Si/Si_1 – _ x Ge_ x Si quantum wells, modification of properties of electron–hole liquid was experimentally shown, which can be interpreted as a change of the major minimum due to an increases in the germanium concentration in the Si_1 – _ x Ge_ x layer. The effect of the multicomponent composition (electrons, light and heavy holes) of the electron–hole liquid on low-temperature photoluminescence spectra of Si/Si_1 ‒ _ x Ge_ x Si quantum wells is discussed.

Low Pressure CVD of GaN from GaCl3 and NH3

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Topf ◽  
S. Koynov ◽  
S. Fischer ◽  
I. Dirnstorfer ◽  
W. Kriegseis ◽  
...  
Keyword(s):  
Growth Rate ◽  
Simple Model ◽  
Low Temperature ◽  
Mass Spectroscopy ◽  
Buffer Layers ◽  
Heteroepitaxial Growth ◽  
Secondary Ion Mass Spectroscopy ◽  
Deposition Zone ◽  
Secondary Ion ◽  
Low Temperature Photoluminescence

ABSTRACTWe report on the heteroepitaxial growth of GaN from GaCl3 and NH3 on (0001) A12O3 and (0001) 6H-SiC substrates. In order to enable homogeneous growth within the entire deposition zone one has to use low process pressures in the 10-1 mbar range, where still a growth rate of ∼ 2 μm/h can be achieved. We present a simple model to describe our process and explain our observations. A comparison of GaN deposited on different substrates and with GaN buffer layers is given by low temperature Photoluminescence (PL). Furthermore, impurities are traced by secondary ion mass spectroscopy (SIMS).

Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 179-182 ◽  
Author(s):  
Georgios Zoulis ◽  
Jian Wu Sun ◽  
Milena Beshkova ◽  
Remigijus Vasiliauskas ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Low Temperature ◽  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Low Level ◽  
Residual N ◽  
Photoluminescence Studies ◽  
P Type ◽  
Secondary Ion ◽  
Low Temperature Photoluminescence

Both, n-type and p-type 3C-SiC samples grown on 6H-SiC substrates by sublimation epitaxy have been investigated. From low temperature photoluminescence studies, we demonstrate a low level of residual (n and/or p-type) doping with weak compensation, which is confirmed by secondary ion mass spectroscopy in the case of p-type samples.

Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 437-440 ◽  
Author(s):  
John W. Steeds
Keyword(s):  
Low Temperature ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Spectra ◽  
Carbon Vacancy ◽  
Low Temperature Photoluminescence

A common set of optical centres found in photoluminescence spectra of electron irradiated 4H SiC is interpreted as originating in neutral carbon-vacancy carbon anti-site pairs.

A low-temperature photoluminescence study of GaAs1-xNx/GaAs multiple quantum wells

2017 ◽  
Author(s):  
M. Biswas ◽  
A. Balgarkashi ◽  
S. Singh ◽  
N. Shinde ◽  
R. L. Makkar ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Study ◽  
Low Temperature Photoluminescence
Sign in / Sign up

Export Citation Format

Share Document