Summary Abstract: Reflection high-energy electron diffraction intensity oscillation during the growth of GaAs by chemical-beam epitaxy
1988 ◽
Vol 6
(2)
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pp. 642
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Keyword(s):
Keyword(s):
1986 ◽
Vol 4
(2)
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pp. 594
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2011 ◽
Vol 80
(6)
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pp. 063602
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1990 ◽
Vol 61
(2)
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pp. 917-918
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