MEBES IV thermal-field emission tandem optics for electron beam lithography

Author(s):  
M. Gesley
2010 ◽  
Vol 19 (2-3) ◽  
pp. 252-255 ◽  
Author(s):  
X.C. LeQuan ◽  
B.K. Choi ◽  
W.P. Kang ◽  
J.L. Davidson

Author(s):  
D. M. Tennant ◽  
R. Fullowan ◽  
H. Takemura ◽  
M. Isobe ◽  
Y. Nakagawa

2000 ◽  
Vol 39 (Part 1, No. 5A) ◽  
pp. 2556-2559 ◽  
Author(s):  
Sangyeon Han ◽  
Sun-a Yang ◽  
Taekeun Hwang ◽  
Jongho Lee ◽  
Jong Duk Lee ◽  
...  

2003 ◽  
Vol 772 ◽  
Author(s):  
Steven R. Lustig ◽  
Edward D. Boyes ◽  
Roger H. French ◽  
Timothy D. Gierke ◽  
Mark A. Harmer ◽  
...  

AbstractWe present a novel process methodology for the controlled cutting of nanotubes and other nanostructures to well-controlled lengths and sizes. The continuing increase in complexity of electronic devices, coupled with decreasing size of individual elements, are placing more stringent demands on the resolution and accuracy of fabrication patterns. The ability to fabricate on a nanometer scale guarantees a continuation in miniaturization of functional devices. Particularly interesting is the application of nanotubes' chemical and electronic properties which vary with their dimensions and structure. One realization of this process includes the use of photolithography or electron beam lithography to place protective resist patterns over the nanostructures to be cut. Those sections which are not covered by the resist pattern are removed by reactive ion etching. This is a scaleable process which permits the simultaneous cutting of many nanostructures and ensembles of nanostructures. The lengths, shapes or length distributions can be predicted from theory and thus specified for a given application requirement. Nanostructures which can be cut in this process include nanotubes, nanofibers and nanoplanes. Large scale production of nanostructures with uniform length or specific size-distribution can be used in electronic applications such as field-emission transistors, optoelectronic elements, single electron devices and sensors.


Author(s):  
L. D. Jackel

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.


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