Multiple quantum wells consisting of InAs/GaAs short-period strained-layer superlattice wells for 1.3–1.55 μm photonic applications

1993 ◽  
Vol 11 (3) ◽  
pp. 809 ◽  
Author(s):  
T. C. Hasenberg
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Strained Layer ◽  
Short Period ◽  
Strained Layer Superlattice

Photoluminescence Studies of [(CdSe)1(ZnSe)2]9-ZnSeTe Multiple Quantum Wells Under High Pressure

1994 ◽  
Vol 358 ◽  
Author(s):  
Z.P. Wang ◽  
Z.X. Liu ◽  
H.X. Han ◽  
J.Q. Zhang ◽  
G.H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Quantum Wells ◽  
Liquid Nitrogen Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type I ◽  
Short Period ◽  
Heavy Hole Subband ◽  
Photoluminescence Studies ◽  
Increasing Temperature

ABSTRACTWe have performed photoluminescence (PL) measurements at liquid nitrogen temperature under high pressure up to 5.5 GPa and in the temperature range 10-300 K at atmospheric pressure on {(ZnSe)30(ZnSe0.92Te0.08)30(ZnSe)30[(CdSe)1(ZnSe)2]9}x5 multiple quantum wells. The PL peaks, EB, E1 and Ew corresponding to the band edge luminescence in ZnSe barrier layer, the transitions from the first conduction subband to the heavy-hole subband in ZnSe0.92Te0.08 layers and [(CdSe)1(ZnSe)2]9 ultra short period superlattice quantum well (SPSLQW) layers have been observed. Experimental results show that ZnSe0.92Te0.08/ZnSe forms a type-I superlattice (SL) in contrast to the type-II ZnSe/ZnTe SL. The pressure coefficients of the EB, E1 and Ew exciton peaks have been determined as 67, 63 and 56 meV/GPa, respectively. With increasing temperature (or pressure), the E1 peak-intensity drastically decreases which is attributed to the thermal effect (or the appearance of many defects in ZnSe0.92Te0.08 under higher pressure).

Band lineup inGaAs1−xSbx/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy

1988 ◽  
Vol 38 (15) ◽  
pp. 10571-10577 ◽  
Author(s):  
G. Ji ◽  
S. Agarwala ◽  
D. Huang ◽  
J. Chyi ◽  
H. Morkoç
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Strained Layer

Ultraviolet lasing and excitonic gain in CdxZn1−xS-ZnS strained-layer multiple quantum wells

1994 ◽  
Vol 138 (1-4) ◽  
pp. 570-574 ◽  
Author(s):  
Yoichi Yamada ◽  
Yasuaki Masumoto ◽  
Tsunemasa Taguchi
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Strained Layer

Electroreflectance spectra of Ge x Si 1- x /Si strained layer multiple-quantum wells

1994 ◽  
Vol 3 (3) ◽  
pp. 216-229
Author(s):  
Pan Shi-hong ◽  
Huang Shuo ◽  
Wang Zhong-he ◽  
Chen Wei ◽  
Zhang Cun-zhou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Strained Layer

Electroreflectance Study of Strained Layer Ge x Si 1-x /Si Multiple Quantum Wells

1994 ◽  
Vol 11 (2) ◽  
pp. 119-122 ◽  
Author(s):  
Shihong Pan ◽  
Shuo Huang ◽  
Wei Chen ◽  
Cunzhou Zhang ◽  
Chi Sheng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Strained Layer

Photocurrent spectroscopy of strained-layer InGaAsGaAs multiple quantum wells

1990 ◽  
Vol 228 (1-3) ◽  
pp. 351-355 ◽  
Author(s):  
X.M. Fang ◽  
X.C. Shen ◽  
H.Q. Hou ◽  
W. Feng ◽  
J.M. Zhou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Strained Layer ◽  
Photocurrent Spectroscopy
Sign in / Sign up

Export Citation Format

Share Document