Effect of Misfit Dislocation Originated from Strained Layer on Photoluminescence Properties of In x Ga 1− x N/GaN Multiple Quantum Wells

2005 ◽  
Vol 22 (4) ◽  
pp. 971-974 ◽  
Author(s):  
Lü Wei ◽  
Li Da-Bing ◽  
Li Chao-Rong ◽  
Chen Gang ◽  
Zhang Ze
Keyword(s):  
Quantum Wells ◽  
Misfit Dislocation ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Properties ◽  
Strained Layer

Band lineup inGaAs1−xSbx/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy

1988 ◽  
Vol 38 (15) ◽  
pp. 10571-10577 ◽  
Author(s):  
G. Ji ◽  
S. Agarwala ◽  
D. Huang ◽  
J. Chyi ◽  
H. Morkoç
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Strained Layer

Ultraviolet lasing and excitonic gain in CdxZn1−xS-ZnS strained-layer multiple quantum wells

1994 ◽  
Vol 138 (1-4) ◽  
pp. 570-574 ◽  
Author(s):  
Yoichi Yamada ◽  
Yasuaki Masumoto ◽  
Tsunemasa Taguchi
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Strained Layer

Electroreflectance spectra of Ge x Si 1- x /Si strained layer multiple-quantum wells

1994 ◽  
Vol 3 (3) ◽  
pp. 216-229
Author(s):  
Pan Shi-hong ◽  
Huang Shuo ◽  
Wang Zhong-he ◽  
Chen Wei ◽  
Zhang Cun-zhou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Strained Layer
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