Accurate determination of shallow doping profiles and interface states for metal–oxide–semiconductor structures from measured capacitance–voltage data

1994 ◽  
Vol 12 (1) ◽  
pp. 342 ◽  
Author(s):  
A. L. M. Osse
Keyword(s):  
Metal Oxide ◽  
Accurate Determination ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Capacitance Voltage ◽  
Doping Profiles

Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

2007 ◽  
Vol 91 (13) ◽  
pp. 133510 ◽  
Author(s):  
Guy Brammertz ◽  
Koen Martens ◽  
Sonja Sioncke ◽  
Annelies Delabie ◽  
Matty Caymax ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Capacitance Voltage

On the role of interface states in low-voltage leakage currents of metal–oxide–semiconductor structures

2002 ◽  
Vol 80 (24) ◽  
pp. 4597-4599 ◽  
Author(s):  
F. Crupi ◽  
C. Ciofi ◽  
A. Germanò ◽  
G. Iannaccone ◽  
J. H. Stathis ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Low Voltage ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Leakage Currents ◽  
Semiconductor Structures
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