Gas source molecular beam epitaxy growth of high quality InGaAsP for 0.98 μm Al-free InGaAs/InGaAsP/InGaP laser diodes

1997 ◽  
Vol 15 (3) ◽  
pp. 707 ◽  
Author(s):  
Jin-Shung Liu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Molecular Beam Epitaxy Growth ◽  
High Quality ◽  
Gas Source

High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

1999 ◽  
Vol 595 ◽  
Author(s):  
M. J. Jurkovic ◽  
L.K. Li ◽  
B. Turk ◽  
W. I. Wang ◽  
S. Syed ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Structural Characteristics ◽  
High Quality ◽  
Gas Source ◽  
Background Doping ◽  
Shubnikov De Haas Oscillations

AbstractGrowth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm−2, 6.0 × 1012 cm−2, and 5.8 × 1012 cm−2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodes

1999 ◽  
Vol 201-202 ◽  
pp. 877-881 ◽  
Author(s):  
M Toivonen ◽  
P Savolainen ◽  
S Orsila ◽  
V Vilokkinen ◽  
M Pessa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Molecular Beam Epitaxy Growth ◽  
Quantum Well Laser ◽  
Nm Range

Gas-source molecular beam epitaxy growth of an 8.5 μm quantum cascade laser

1997 ◽  
Vol 71 (18) ◽  
pp. 2593-2595 ◽  
Author(s):  
S. Slivken ◽  
C. Jelen ◽  
A. Rybaltowski ◽  
J. Diaz ◽  
M. Razeghi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Cascade Laser ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Quantum Cascade ◽  
Gas Source

Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation

2001 ◽  
Vol 79 (20) ◽  
pp. 3263-3265 ◽  
Author(s):  
H. Kim ◽  
G. Glass ◽  
J. A. N. T. Soares ◽  
Y. L. Foo ◽  
P. Desjardins ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Gas Source

Blue Light Emitting Laser Diodes Based on ZnSe/ZnCdSe Structure Grown by Gas Source Molecular Beam Epitaxy

1994 ◽  
Vol 33 (Part 2, No. 1A) ◽  
pp. L13-L14 ◽  
Author(s):  
Masayuki Imaizumi ◽  
Yasuyuki Endoh ◽  
Ken-ichi Ohtsuka ◽  
Muneyoshi Suita ◽  
Toshiro Isu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Blue Light ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Light Emitting ◽  
Gas Source

Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 3810-3813 ◽  
Author(s):  
Reiko Kuroiwa ◽  
Hajime Asahi ◽  
Kakuya Iwata ◽  
Seong-Jin Kim ◽  
Joo-Hyong Noh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Scanning Tunneling ◽  
Molecular Beam Epitaxy Growth ◽  
Tunneling Microscopy ◽  
Gas Source ◽  
Rich Side

ZnCdSeMgZnSSe laser diodes fabricated by gas-source molecular beam epitaxy

1996 ◽  
Vol 159 (1-4) ◽  
pp. 1167 ◽  
Author(s):  
M. Imaizumi ◽  
Y. Endoh ◽  
M. Suita ◽  
K. Ohtsuka ◽  
T. Isu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Gas Source
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