Fabrication and characterization of a two-dimensional electron gas in modulation doped ZnTe/Cd[sub 1−x]Mn[sub x]Se quantum wells

Author(s):  
R. Knobel ◽  
I. P. Smorchkova ◽  
N. Samarth
2006 ◽  
Vol 243 (4) ◽  
pp. 878-881 ◽  
Author(s):  
E. A. Zhukov ◽  
D. R. Yakovlev ◽  
M. Bayer ◽  
G. Karczewski ◽  
T. Wojtowicz ◽  
...  

2021 ◽  
Vol 66 (12) ◽  
pp. 1058
Author(s):  
V.V. Kaliuzhnyi ◽  
O.I. Liubchenko ◽  
M.D. Tymochko ◽  
Y.M. Olikh ◽  
V.P. Kladko ◽  
...  

A method of dynamic deformations has been proposed as a useful informative tool in the characterization of transportation properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is found that the exposing of a sample to ultrasonic vibrations results in the persistent acousto-conductivity (PAC) which was observed up to room temperatures. The PAC behaves itself like persistent photoconductivity (PPC), and the carrier density in the 2DEG channel is primarily contributed by the transfer of electrons excited from traps (like DX centers) as a result of their reconstruction under the ultrasonic loading.


Author(s):  
Е.Р. Бурмистров ◽  
Л.П. Авакянц

A new approach to determining the parameters of a two-dimensional electron gas in InGaN/GaN quantum wells is proposed. It is based on the method of terahertz spectroscopy with time resolution, within the framework of which the terahertz frequencies of two-dimensional plasmon resonances excited in the studied samples of InGaN/AlGaN/GaN heterostructures by femtosecond laser pulses at a wavelength of 797 nm were recorded. Oscillating behavior of the output terahertz radiation power with minima in the frequency range 1−5 THz is shown, which is associated with the excitation of plasmon oscillations in a two-dimensional electron gas localized in an InGaN/GaN quantum well. During the processing of terahertz spectra, the effect of renormalization of the effective mass of two-dimensional electron gas, as well as phase modulation near the frequencies of plasmon resonances with an increase in the temperature of the sample from 90 to 170 K, was found. The proposed method is non-contact and can be used in a wide temperature range.


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