scholarly journals Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1678-1685 ◽  
Author(s):  
Seiya Kasai ◽  
Kei-ichiroh Jinushi ◽  
Hidemasa Tomozawa ◽  
Hideki Hasegawa
2021 ◽  
Vol 66 (12) ◽  
pp. 1058
Author(s):  
V.V. Kaliuzhnyi ◽  
O.I. Liubchenko ◽  
M.D. Tymochko ◽  
Y.M. Olikh ◽  
V.P. Kladko ◽  
...  

A method of dynamic deformations has been proposed as a useful informative tool in the characterization of transportation properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is found that the exposing of a sample to ultrasonic vibrations results in the persistent acousto-conductivity (PAC) which was observed up to room temperatures. The PAC behaves itself like persistent photoconductivity (PPC), and the carrier density in the 2DEG channel is primarily contributed by the transfer of electrons excited from traps (like DX centers) as a result of their reconstruction under the ultrasonic loading.


2004 ◽  
Vol 95 (12) ◽  
pp. 7982-7989 ◽  
Author(s):  
S. Elhamri ◽  
R. Berney ◽  
W. C. Mitchel ◽  
W. D. Mitchell ◽  
J. C. Roberts ◽  
...  

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