Role of physisorption in atomic layer etching of silicon nitride

2020 ◽  
Vol 38 (4) ◽  
pp. 043007
Author(s):  
Shyam Sridhar ◽  
Peter L. G. Ventzek ◽  
Alok Ranjan
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer ◽  
Atomic Layer Etching

Atomic layer etching of silicon nitride using cyclic process with hydrofluorocarbon chemistry

2017 ◽  
Vol 56 (6S2) ◽  
pp. 06HB07 ◽  
Author(s):  
Yohei Ishii ◽  
Kazumasa Okuma ◽  
Tiffany Saldana ◽  
Kenji Maeda ◽  
Nobuyuki Negishi ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer ◽  
Cyclic Process ◽  
Atomic Layer Etching

scholarly journals Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride

2015 ◽  
Vol 6 (18) ◽  
pp. 3610-3614 ◽  
Author(s):  
Chaitanya Krishna Ande ◽  
Harm C. M. Knoops ◽  
Koen de Peuter ◽  
Maarten van Drunen ◽  
Simon D. Elliott ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Surface Termination ◽  
Layer Deposition

In Situ Monitoring of Surface Reactions during Atomic Layer Etching of Silicon Nitride Using Hydrogen Plasma and Fluorine Radicals

2019 ◽  
Vol 11 (40) ◽  
pp. 37263-37269 ◽  
Author(s):  
Kazuya Nakane ◽  
René H. J. Vervuurt ◽  
Takayoshi Tsutsumi ◽  
Nobuyoshi Kobayashi ◽  
Masaru Hori
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Plasma ◽  
Surface Reactions ◽  
Atomic Layer ◽  
In Situ Monitoring ◽  
Atomic Layer Etching

Atomic layer etching of silicon nitride using infrared annealing for short desorption time of ammonium fluorosilicate

2017 ◽  
Vol 56 (6S2) ◽  
pp. 06HB01 ◽  
Author(s):  
Nobuya Miyoshi ◽  
Hiroyuki Kobayashi ◽  
Kazunori Shinoda ◽  
Masaru Kurihara ◽  
Tomoyuki Watanabe ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer ◽  
Desorption Time ◽  
Atomic Layer Etching

Role of Trimethylaluminum in Low Temperature Atomic Layer Deposition of Silicon Nitride

2017 ◽  
Vol 29 (14) ◽  
pp. 6022-6029 ◽  
Author(s):  
Aaron Dangerfield ◽  
Charith E. Nanayakkara ◽  
Anupama Mallikarjunan ◽  
Xinjian Lei ◽  
Ronald M. Pearlstein ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Self-limiting reactions of ammonium salt in CHF3/O2 downstream plasma for thermal-cyclic atomic layer etching of silicon nitride

2019 ◽  
Vol 37 (5) ◽  
pp. 051002 ◽  
Author(s):  
Kazunori Shinoda ◽  
Nobuya Miyoshi ◽  
Hiroyuki Kobayashi ◽  
Masaru Izawa ◽  
Tomonori Saeki ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ammonium Salt ◽  
Atomic Layer ◽  
Atomic Layer Etching
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