fluorocarbon plasmas Latest Research Papers

Scaling of atomic layer etching of SiO2 in fluorocarbon plasmas: Transient etching and surface roughness

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/6.0000941 ◽

2021 ◽

Vol 39 (3) ◽

pp. 033003

Author(s):

Xifeng Wang ◽

Mingmei Wang ◽

Peter Biolsi ◽

Mark J. Kushner

Keyword(s):

Surface Roughness ◽

Atomic Layer ◽

Fluorocarbon Plasmas ◽

Atomic Layer Etching

Download Full-text

Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.5049225 ◽

2018 ◽

Vol 36 (6) ◽

pp. 06B101 ◽

Cited By ~ 10

Author(s):

Chad M. Huard ◽

Saravanapriyan Sriraman ◽

Alex Paterson ◽

Mark J. Kushner

Keyword(s):

Silicon Nitride ◽

Silicon Dioxide ◽

Atomic Layer ◽

Transient Behavior ◽

Fluorocarbon Plasmas ◽

Atomic Layer Etching

Download Full-text

Etching characteristics of diamond-like carbon in fluorocarbon plasmas

Physical Sciences and Technology ◽

10.26577/phst-2018-2-151 ◽

2018 ◽

Vol 5 (2) ◽

pp. 4-9

Author(s):

K. Takahashi ◽

◽

R. Takahashi ◽

Keyword(s):

Diamond Like Carbon ◽

Fluorocarbon Plasmas

Download Full-text

Quasiatomic layer etching of silicon oxide selective to silicon nitride in topographic structures using fluorocarbon plasmas

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4978224 ◽

2017 ◽

Vol 35 (3) ◽

pp. 031301 ◽

Cited By ~ 4

Author(s):

Mingmei Wang ◽

Peter L. G. Ventzek ◽

Alok Ranjan

Keyword(s):

Silicon Nitride ◽

Silicon Oxide ◽

Fluorocarbon Plasmas

Download Full-text

Ion contributions to gas–surface interactions in inductively-coupled fluorocarbon plasmas

International Journal of Mass Spectrometry ◽

10.1016/j.ijms.2012.09.006 ◽

2012 ◽

Vol 330-332 ◽

pp. 46-57 ◽

Cited By ~ 5

Author(s):

Michael F. Cuddy ◽

Joshua M. Blechle ◽

Ellen R. Fisher

Keyword(s):

Surface Interactions ◽

Inductively Coupled ◽

Fluorocarbon Plasmas ◽

Gas Surface Interactions

Download Full-text

Gain and loss mechanisms for neutral species in low pressure fluorocarbon plasmas by infrared spectroscopy

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4746411 ◽

2012 ◽

Vol 30 (5) ◽

pp. 051308 ◽

Cited By ~ 2

Author(s):

Caleb T. Nelson ◽

Lawrence J. Overzet ◽

Matthew J. Goeckner

Keyword(s):

Infrared Spectroscopy ◽

Low Pressure ◽

Neutral Species ◽

Fluorocarbon Plasmas ◽

Gain And Loss ◽

Loss Mechanisms

Download Full-text

Differences in erosion mechanism and selectivity between Ti and TiN in fluorocarbon plasmas for dielectric etch

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4736979 ◽

2012 ◽

Vol 30 (4) ◽

pp. 041811 ◽

Cited By ~ 5

Author(s):

Florian Weilnboeck ◽

Elliot Bartis ◽

Sivan Shachar ◽

Gottlieb S. Oehrlein ◽

David Farber ◽

...

Keyword(s):

Erosion Mechanism ◽

Fluorocarbon Plasmas

Download Full-text

Temperature dependence of the infrared absorption cross-sections of neutral species commonly found in fluorocarbon plasmas

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.3679408 ◽

2012 ◽

Vol 30 (2) ◽

pp. 021305 ◽

Cited By ~ 7

Author(s):

Caleb T. Nelson ◽

Lawrence J. Overzet ◽

Matthew J. Goeckner

Keyword(s):

Temperature Dependence ◽

Cross Sections ◽

Infrared Absorption ◽

Absorption Cross ◽

Neutral Species ◽

Fluorocarbon Plasmas

Download Full-text

Study of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etch

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3690643 ◽

2012 ◽

Vol 30 (2) ◽

pp. 021804 ◽

Cited By ~ 2

Author(s):

F. Weilnboeck ◽

E. Bartis ◽

S. Shachar ◽

G. S. Oehrlein ◽

D. Farber ◽

...

Keyword(s):

Fluorocarbon Plasmas

Download Full-text

Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.3626533 ◽

2011 ◽

Vol 29 (5) ◽

pp. 051306 ◽

Cited By ~ 17

Author(s):

Mingmei Wang ◽

Mark J. Kushner

Keyword(s):

Fluorocarbon Plasmas

Download Full-text

fluorocarbon plasmas
Recently Published Documents

TOTAL DOCUMENTS

H-INDEX

Scaling of atomic layer etching of SiO2 in fluorocarbon plasmas: Transient etching and surface roughness

Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas

Etching characteristics of diamond-like carbon in fluorocarbon plasmas

Quasiatomic layer etching of silicon oxide selective to silicon nitride in topographic structures using fluorocarbon plasmas

Ion contributions to gas–surface interactions in inductively-coupled fluorocarbon plasmas

Gain and loss mechanisms for neutral species in low pressure fluorocarbon plasmas by infrared spectroscopy

Differences in erosion mechanism and selectivity between Ti and TiN in fluorocarbon plasmas for dielectric etch

Temperature dependence of the infrared absorption cross-sections of neutral species commonly found in fluorocarbon plasmas

Study of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etch

Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas

Export Citation Format

fluorocarbon plasmasRecently Published Documents

TOTAL DOCUMENTS

H-INDEX

Scaling of atomic layer etching of SiO2 in fluorocarbon plasmas: Transient etching and surface roughness

Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas

Etching characteristics of diamond-like carbon in fluorocarbon plasmas

Quasiatomic layer etching of silicon oxide selective to silicon nitride in topographic structures using fluorocarbon plasmas

Ion contributions to gas–surface interactions in inductively-coupled fluorocarbon plasmas

Gain and loss mechanisms for neutral species in low pressure fluorocarbon plasmas by infrared spectroscopy

Differences in erosion mechanism and selectivity between Ti and TiN in fluorocarbon plasmas for dielectric etch

Temperature dependence of the infrared absorption cross-sections of neutral species commonly found in fluorocarbon plasmas

Study of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etch

Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas

fluorocarbon plasmas
Recently Published Documents