Stoichiometry controlled homogeneous ternary oxide growth in showerhead atomic layer deposition reactor and application for ZrxHf1−xO2

2021 ◽  
Vol 39 (3) ◽  
pp. 030401
Author(s):  
Triratna Muneshwar ◽  
Doug Barlage ◽  
Ken Cadien
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Ternary Oxide ◽  
Oxide Growth ◽  
Layer Deposition

Cubic crystalline erbium oxide growth on GaN(0001) by atomic layer deposition

2017 ◽  
Vol 122 (21) ◽  
pp. 215302 ◽  
Author(s):  
Pei-Yu Chen ◽  
Agham B. Posadas ◽  
Sunah Kwon ◽  
Qingxiao Wang ◽  
Moon J. Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Oxide Growth ◽  
Erbium Oxide ◽  
Layer Deposition

In Situ Spectroscopic Approach to Atomic Layer Deposition

2002 ◽  
Vol 745 ◽  
Author(s):  
Martin M. Frank ◽  
Yves J. Chabal ◽  
Glen D. Wilk
Keyword(s):  
Infrared Spectroscopy ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Silicon Surfaces ◽  
Oxide Growth ◽  
Layer By Layer ◽  
Layer Deposition

ABSTRACTThere is great need for a mechanistic understanding of growth chemistry during atomic layer deposition (ALD) of films for electronic applications. Since commercial ALD reactors are presently not equipped for in situ spectroscopy, we have constructed a model reactor that enables single-pass transmission infrared spectroscopy to be performed in situ on a layer-by-layer basis. We demonstrate the viability of this approach for the study of aluminum oxide growth on silicon surfaces, motivated by alternative gate oxide applications. Thanks to submonolayer dielectric and adsorbate sensitivity, we can quantify oxide thicknesses and hydroxyl areal densities on thermal and chemical SiO2/Si(100) substrates. Methyl formation and hydroxyl consumption upon initial trimethylaluminum (TMA) reaction can also be followed. We verify that in situ grown Al2O3 films are compatible in structure to films grown in a commercial ALD reactor.

scholarly journals Real-Time Observation of Atomic Layer Deposition Inhibition: Metal Oxide Growth on Self-Assembled Alkanethiols

2014 ◽  
Vol 6 (15) ◽  
pp. 11891-11898 ◽  
Author(s):  
Jason R. Avila ◽  
Erica J. DeMarco ◽  
Jonathan D. Emery ◽  
Omar K. Farha ◽  
Michael J. Pellin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Real Time ◽  
Atomic Layer ◽  
Oxide Growth ◽  
Layer Deposition ◽  
Self Assembled ◽  
Time Observation ◽  
Real Time Observation

scholarly journals Toward epitaxial ternary oxide multilayer device stacks by atomic layer deposition

2019 ◽  
Vol 37 (2) ◽  
pp. 020602 ◽  
Author(s):  
Peter J. King ◽  
Marko Vehkamäki ◽  
Miika Mattinen ◽  
Mikko J. Heikkilä ◽  
Kenichiro Mizohata ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Ternary Oxide ◽  
Layer Deposition

Features of the synthesis of lithium-based ternary oxide nanofilms by atomic layer deposition with LHMDS for thin-film LIBs

2020 ◽  
Vol 25 ◽  
pp. 6-12
Author(s):  
Maxim Yu. Maximov ◽  
Yury Koshtyal ◽  
Ilya Mitrofanov ◽  
Ilya Ezhov ◽  
Aleksander Rumyantsev ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Ternary Oxide ◽  
Layer Deposition

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition
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