Cubic crystalline erbium oxide growth on GaN(0001) by atomic layer deposition

2017 ◽  
Vol 122 (21) ◽  
pp. 215302 ◽  
Author(s):  
Pei-Yu Chen ◽  
Agham B. Posadas ◽  
Sunah Kwon ◽  
Qingxiao Wang ◽  
Moon J. Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Oxide Growth ◽  
Erbium Oxide ◽  
Layer Deposition

Cyclopentadienyl Precursors for the Atomic Layer Deposition of Erbium Oxide Thin Films

2014 ◽  
Vol 20 (7-8-9) ◽  
pp. 217-223 ◽  
Author(s):  
Timothee Blanquart ◽  
Mikko Kaipio ◽  
Jaakko Niinistö ◽  
Marco Gavagnin ◽  
Valentino Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Erbium Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition

Atomic Layer Deposition and Characterization of Erbium Oxide-Doped Zirconium Oxide Thin Films

2010 ◽  
Vol 157 (10) ◽  
pp. G193 ◽  
Author(s):  
Aile Tamm ◽  
Marianna Kemell ◽  
Jekaterina Kozlova ◽  
Timo Sajavaara ◽  
Massimo Tallarida ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Zirconium Oxide ◽  
Atomic Layer ◽  
Erbium Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition

Atomic layer deposition and characterization of zirconium oxide–erbium oxide nanolaminates

2010 ◽  
Vol 519 (2) ◽  
pp. 666-673 ◽  
Author(s):  
Aile Tamm ◽  
Mikko Heikkilä ◽  
Marianna Kemell ◽  
Jekaterina Kozlova ◽  
Kaupo Kukli ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Zirconium Oxide ◽  
Atomic Layer ◽  
Erbium Oxide ◽  
Layer Deposition

In Situ Spectroscopic Approach to Atomic Layer Deposition

2002 ◽  
Vol 745 ◽  
Author(s):  
Martin M. Frank ◽  
Yves J. Chabal ◽  
Glen D. Wilk
Keyword(s):  
Infrared Spectroscopy ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Silicon Surfaces ◽  
Oxide Growth ◽  
Layer By Layer ◽  
Layer Deposition

ABSTRACTThere is great need for a mechanistic understanding of growth chemistry during atomic layer deposition (ALD) of films for electronic applications. Since commercial ALD reactors are presently not equipped for in situ spectroscopy, we have constructed a model reactor that enables single-pass transmission infrared spectroscopy to be performed in situ on a layer-by-layer basis. We demonstrate the viability of this approach for the study of aluminum oxide growth on silicon surfaces, motivated by alternative gate oxide applications. Thanks to submonolayer dielectric and adsorbate sensitivity, we can quantify oxide thicknesses and hydroxyl areal densities on thermal and chemical SiO2/Si(100) substrates. Methyl formation and hydroxyl consumption upon initial trimethylaluminum (TMA) reaction can also be followed. We verify that in situ grown Al2O3 films are compatible in structure to films grown in a commercial ALD reactor.

High Growth Rate of Erbium Oxide Thin Films in Atomic Layer Deposition from (CpMe)3Er and Water Precursors

2005 ◽  
Vol 11 (10) ◽  
pp. 415-419 ◽  
Author(s):  
J. Päiväsaari ◽  
J. Niinistö ◽  
K. Arstila ◽  
K. Kukli ◽  
M. Putkonen ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Atomic Layer Deposition ◽  
High Growth ◽  
Atomic Layer ◽  
High Growth Rate ◽  
Erbium Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition

scholarly journals Real-Time Observation of Atomic Layer Deposition Inhibition: Metal Oxide Growth on Self-Assembled Alkanethiols

2014 ◽  
Vol 6 (15) ◽  
pp. 11891-11898 ◽  
Author(s):  
Jason R. Avila ◽  
Erica J. DeMarco ◽  
Jonathan D. Emery ◽  
Omar K. Farha ◽  
Michael J. Pellin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Real Time ◽  
Atomic Layer ◽  
Oxide Growth ◽  
Layer Deposition ◽  
Self Assembled ◽  
Time Observation ◽  
Real Time Observation
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