Influence of primary electron incident angle and electron bombardment on the secondary electron yield of laser-treated copper

Based on free-electron model, the calculated inelastic mean escape depth of secondary electrons, experimental one, the energy band of metal, the characteristics and processes of secondary electron emission, maximum number of secondary electrons released per primary electron δ(Φ,EF)PEm as a function of parameter Km, work function Φ and Fermi energy EF was deduced, where Km is a constant for a given metal in the energy range 100–800 eV. According to the relationship between maximum secondary electron yield from metal δ(Φ,EF)m and δ(Φ,EF)PEm, the formula for δ(Φ,EF)m as a function of atomic number Z, parameter Km, Φ and EF was deduced. Using the deduced formula for δ(Φ,EF)m, Z, experimental δ(Φ,EF)m, Φ and EF, Km relative to alkali metals, Km relative to earth-alkali metals and the mean value of Km were computed, respectively. And the formulae for maximum secondary electron yield from alkali metals, earth-alkali metals and metals were obtained and proved to be true, respectively. On the basis of the deduced formula for δ(Φ,EF)m and the empirical relation that high Φ are connected with high EF, it can be concluded that high δ(Φ,EF)m are connected with high Φ and vice versa.

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THEORETICAL RESEARCH OF SECONDARY ELECTRON EMISSION FROM NEGATIVE ELECTRON AFFINITY SEMICONDUCTORS

Surface Review and Letters ◽

10.1142/s0218625x18501810 ◽

2019 ◽

Vol 26 (04) ◽

pp. 1850181 ◽

Cited By ~ 3

Author(s):

AI-GEN XIE ◽

YANG YU ◽

YA-YI CHEN ◽

YU-QING XIA ◽

HAO-YU LIU

Keyword(s):

Electron Affinity ◽

Electron Emission ◽

Secondary Electron ◽

Secondary Electron Emission ◽

Primary Electron ◽

Theoretical Research ◽

Negative Electron Affinity ◽

Secondary Electron Yield ◽

Electron Yield ◽

Yield Formula

Based on primary range [Formula: see text], relationships among parameters of secondary electron yield [Formula: see text] and the processes and characteristics of secondary electron emission (SEE) from negative electron affinity (NEA) semiconductors, the universal formulas for [Formula: see text] at [Formula: see text] and at [Formula: see text] for NEA semiconductors were deduced, respectively; where [Formula: see text] is incident energy of primary electron. According to the characteristics of SEE from NEA semiconductors with [Formula: see text], [Formula: see text], deduced universal formulas for [Formula: see text] at [Formula: see text] and at [Formula: see text] for NEA semiconductors and experimental data, special formulas for [Formula: see text] at 0.5[Formula: see text] of several NEA semiconductors with [Formula: see text] were deduced and proved to be true experimentally, respectively; where [Formula: see text] is the [Formula: see text] at which [Formula: see text] reaches maximum secondary electron yield. It can be concluded that the formula for [Formula: see text] of NEA semiconductors with [Formula: see text] was deduced and could be used to calculate [Formula: see text], and that the method of calculating the 1/[Formula: see text] of NEA semiconductors with [Formula: see text] is plausible; where [Formula: see text] is the probability that an internal secondary electron escapes into vacuum upon reaching the surface of emitter, and 1/[Formula: see text] is mean escape depth of secondary electron.

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Secondary electron yield with primary electron beam of kilo-electron-volts.

Vacuum ◽

10.1016/0042-207x(75)91145-8 ◽

1975 ◽

Vol 25 (1) ◽

pp. 35

Keyword(s):

Electron Beam ◽

Secondary Electron ◽

Primary Electron ◽

Primary Electron Beam ◽

Secondary Electron Yield ◽

Electron Yield

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