Charge density dependence of carrier tunneling in asymmetric quantum well structures

1990 ◽  
Author(s):  
C. Tanguy ◽  
Benoit Deveaud ◽  
Andre Regreny ◽  
Daniele Hulin
Keyword(s):  
Quantum Well ◽  
Charge Density ◽  
Density Dependence ◽  
Quantum Well Structures ◽  
Asymmetric Quantum ◽  
Carrier Tunneling

Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

2016 ◽  
Vol 119 (16) ◽  
pp. 164501 ◽  
Author(s):  
Lin'an Yang ◽  
Yue Li ◽  
Ying Wang ◽  
Shengrui Xu ◽  
Yue Hao
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Quantum Well Structures ◽  
Tunneling Diodes ◽  
Asymmetric Quantum

Coherent carrier propagation in the continuum of asymmetric quantum-well structures

1999 ◽  
Vol 60 (20) ◽  
pp. R13993-R13996 ◽  
Author(s):  
C. Schönbein ◽  
H. Schneider ◽  
M. Walther
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Asymmetric Quantum ◽  
The Continuum

scholarly journals Evidence of correlated electron hole pairs in dots in asymmetric quantum well structures

2010 ◽  
Vol 245 ◽  
pp. 012050 ◽  
Author(s):  
M H Abdellatif ◽  
Jin Dong Song ◽  
Won Jun Choi ◽  
Nam Ki Cho ◽  
Jung Il Lee
Keyword(s):  
Quantum Well ◽  
Electron Hole ◽  
Quantum Well Structures ◽  
Correlated Electron ◽  
Asymmetric Quantum

scholarly journals Charge-density domains in photoexcited quantum-well structures

1990 ◽  
Vol 228 (1-3) ◽  
pp. 88-91 ◽  
Author(s):  
R. Merlin ◽  
N. Mestres ◽  
A. McKiernan ◽  
J. Oh ◽  
P.K. Bhattacharya
Keyword(s):  
Quantum Well ◽  
Charge Density ◽  
Quantum Well Structures

Intrasubband 1.55 μm Electrooptical Modulation in SiGe Asymmetric Quantum Well Structures

1993 ◽  
Vol 298 ◽  
Author(s):  
Lionel R. Friedman ◽  
Richard A. Soref
Keyword(s):  
Quantum Well ◽  
Electric Fields ◽  
Field Effect ◽  
Narrow Linewidth ◽  
Microwave Response ◽  
Optical Extinction ◽  
Quantum Well Structures ◽  
Electrooptic Modulator ◽  
Asymmetric Quantum ◽  
Optoelectronic Integration

AbstractA new, fast, intrasubband 1.55 μm electrooptic modulator in the SiGe/Si/CaF2-on-Si steppedquantum- well system is proposed and analyzed. At electric fields of ±8 V/μm, resonant 1-3 conduction intrasubband absorption is predicted to give 18 dB of optical extinction for narrow-linewidth transitions. We expect this field effect modulator to have microwave response, plus compatibility with Si-based optoelectronic integration.

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