scholarly journals Asymmetric quantum well structures for enhanced infrared photon absorption

2013 ◽  
Author(s):  
Mehjabeen A. Khan
2016 ◽  
Vol 119 (16) ◽  
pp. 164501 ◽  
Author(s):  
Lin'an Yang ◽  
Yue Li ◽  
Ying Wang ◽  
Shengrui Xu ◽  
Yue Hao

1999 ◽  
Vol 60 (20) ◽  
pp. R13993-R13996 ◽  
Author(s):  
C. Schönbein ◽  
H. Schneider ◽  
M. Walther

2010 ◽  
Vol 245 ◽  
pp. 012050 ◽  
Author(s):  
M H Abdellatif ◽  
Jin Dong Song ◽  
Won Jun Choi ◽  
Nam Ki Cho ◽  
Jung Il Lee

1991 ◽  
Vol 05 (17) ◽  
pp. 1133-1138
Author(s):  
KAZUHITO FUJII ◽  
AKIRA SHIMIZU ◽  
JOHAN BERGQUIST ◽  
SOTOMITSU IKEDA ◽  
TAKESHI SAWADA

We have measured two-photon-absorption spectra of GaAs/Al 0.4 Ga 0.6 As quantum-well structures in a static electric field for photon energies near half the band gap energy, and found drastic field-induced-changes in the spectra. The two-photon-absorption peak at half the energy of the lowest light-hole exciton is induced by the static electric field normal to the quantum well layers, in agreement with a theory that takes account of quasi-two-dimensional exciton effects. With increasing the electric field, however, this peak grows more drastically than the theoretical prediction, and it approaches a large value predicted by another simplified theory based on a two-level model.


1993 ◽  
Vol 298 ◽  
Author(s):  
Lionel R. Friedman ◽  
Richard A. Soref

AbstractA new, fast, intrasubband 1.55 μm electrooptic modulator in the SiGe/Si/CaF2-on-Si steppedquantum- well system is proposed and analyzed. At electric fields of ±8 V/μm, resonant 1-3 conduction intrasubband absorption is predicted to give 18 dB of optical extinction for narrow-linewidth transitions. We expect this field effect modulator to have microwave response, plus compatibility with Si-based optoelectronic integration.


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