Intrasubband 1.55 μm Electrooptical Modulation in SiGe Asymmetric Quantum Well Structures

1993 ◽  
Vol 298 ◽  
Author(s):  
Lionel R. Friedman ◽  
Richard A. Soref
Keyword(s):  
Quantum Well ◽  
Electric Fields ◽  
Field Effect ◽  
Narrow Linewidth ◽  
Microwave Response ◽  
Optical Extinction ◽  
Quantum Well Structures ◽  
Electrooptic Modulator ◽  
Asymmetric Quantum ◽  
Optoelectronic Integration

AbstractA new, fast, intrasubband 1.55 μm electrooptic modulator in the SiGe/Si/CaF2-on-Si steppedquantum- well system is proposed and analyzed. At electric fields of ±8 V/μm, resonant 1-3 conduction intrasubband absorption is predicted to give 18 dB of optical extinction for narrow-linewidth transitions. We expect this field effect modulator to have microwave response, plus compatibility with Si-based optoelectronic integration.

Tunneling-induced high gain and narrow linewidth of a cavity with an asymmetric quantum-well system

2012 ◽  
Vol 59 (8) ◽  
pp. 729-733 ◽  
Author(s):  
Aihong Yang ◽  
Yandong Peng ◽  
Dehua Li ◽  
Luyin Zhang ◽  
Xueshui Wang
Keyword(s):  
Quantum Well ◽  
High Gain ◽  
Narrow Linewidth ◽  
Asymmetric Quantum

Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

2016 ◽  
Vol 119 (16) ◽  
pp. 164501 ◽  
Author(s):  
Lin'an Yang ◽  
Yue Li ◽  
Ying Wang ◽  
Shengrui Xu ◽  
Yue Hao
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Quantum Well Structures ◽  
Tunneling Diodes ◽  
Asymmetric Quantum

Coherent carrier propagation in the continuum of asymmetric quantum-well structures

1999 ◽  
Vol 60 (20) ◽  
pp. R13993-R13996 ◽  
Author(s):  
C. Schönbein ◽  
H. Schneider ◽  
M. Walther
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Asymmetric Quantum ◽  
The Continuum

scholarly journals Evidence of correlated electron hole pairs in dots in asymmetric quantum well structures

2010 ◽  
Vol 245 ◽  
pp. 012050 ◽  
Author(s):  
M H Abdellatif ◽  
Jin Dong Song ◽  
Won Jun Choi ◽  
Nam Ki Cho ◽  
Jung Il Lee
Keyword(s):  
Quantum Well ◽  
Electron Hole ◽  
Quantum Well Structures ◽  
Correlated Electron ◽  
Asymmetric Quantum

SHALLOW DONORS IN A COUPLED TRIPLE GRADED QUANTUM WELL UNDER THE ELECTRIC AND MAGNETIC FIELDS

2006 ◽  
Vol 13 (04) ◽  
pp. 397-401 ◽  
Author(s):  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Quantum Wells ◽  
Electric Fields ◽  
Growth Direction ◽  
Physical Parameters ◽  
Donor Impurity ◽  
Quantum Well Structures ◽  
Hydrogenic Donor Impurity ◽  
Electric And Magnetic Fields

The binding energy of the donor in three different shaped triple graded GaAs -( Ga , Al ) As quantum wells which is obtained by changing the depth of the central-well potential (Vo) is calculated by using a variational approach. The results have been obtained in the presence of uniform magnetic and electric fields applied along the growth direction as a function of the impurity position. In addition, we also give the binding energy of the hydrogenic donor impurity for triple square quantum wells having the same physical parameters with triple graded quantum well structures in order to see the effect of different geometric confinements on the donor impurity binding energy.

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