Development of a sapphire optical pressure sensor for high-temperature applications

Author(s):  
David A. Mills ◽  
Dylan Alexander ◽  
Ghatu Subhash ◽  
Mark Sheplak
2014 ◽  
Vol 609-610 ◽  
pp. 1053-1059
Author(s):  
Zhong Ren ◽  
Qiu Lin Tan ◽  
Chen Li ◽  
Tao Luo ◽  
Ting Cai ◽  
...  

A wide range pressure sensor is designed based on the theoretical basis of LC series resonance circuit model to realize the wireless passive measurement in the harsh environment, such as high temperature and high pressure. The capacitive pressure sensitive device is devised by the technology of high-temperature co-fired ceramics (HTCC) to form nine density cavities in zirconia ceramic substrates, and thick film technology to print capacitance plates and planar spiral inductors. The theoretical calculation and simulation analysis of the designed sensor are made respectively under high pressure (10MPa) and temperature (600 °C), the results of which verify the feasibility of the design in a wide range of pressure for high-temperature applications, and provide the reliable theory basis for the fabrication of wide range pressure sensor.


Micromachines ◽  
2014 ◽  
Vol 5 (4) ◽  
pp. 814-824 ◽  
Author(s):  
Tao Luo ◽  
Qiulin Tan ◽  
Liqiong Ding ◽  
Tanyong Wei ◽  
Chao Li ◽  
...  

2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Fei Lu ◽  
Yanjie Guo ◽  
Qiulin Tan ◽  
Tanyong Wei ◽  
Guozhu Wu ◽  
...  

A novel reentrant cavity-microstrip patch antenna integrated wireless passive pressure sensor was proposed in this paper for high temperature applications. The reentrant cavity was analyzed from aspects of distributed model and equivalent lumped circuit model, on the basis of which an optimal sensor structure integrated with a rectangular microstrip patch antenna was proposed to better transmit/receive wireless signals. In this paper, the proposed sensor was fabricated with high temperature resistant alumina ceramic and silver metalization with weld sealing, and it was measured in a hermetic metal tank with nitrogen pressure loading. It was verified that the sensor was highly sensitive, keeping stable performance up to 300 kPa with an average sensitivity of 981.8 kHz/kPa at temperature 25°C, while, for high temperature measurement, the sensor can operate properly under pressure of 60–120 kPa in the temperature range of 25–300°C with maximum pressure sensitivity of 179.2 kHz/kPa. In practical application, the proposed sensor is used in a method called table lookup with a maximum error of 5.78%.


2010 ◽  
Vol 5 ◽  
pp. 1396-1400 ◽  
Author(s):  
S. Fricke ◽  
A. Friedberger ◽  
H. Seidel ◽  
U. Schmid

Sensors ◽  
2021 ◽  
Vol 21 (2) ◽  
pp. 379
Author(s):  
Baohua Tian ◽  
Haiping Shang ◽  
Lihuan Zhao ◽  
Dahai Wang ◽  
Yang Liu ◽  
...  

The hermeticity performance of the cavity structure has an impact on the long-term stability of absolute pressure sensors for high temperature applications. In this paper, a bare silicon carbide (SiC) wafer was bonded to a patterned SiC substrate with shallow grooves based on a room temperature direct bonding process to achieve a sealed cavity structure. Then the hermeticity analysis on the SiC cavity structure was performed. The microstructure observation demonstrates that the SiC wafers are tightly bonded and the cavities remain intact. Moreover, the tensile testing indicates that the tensile strength of bonding interface is ~8.01 MPa. Moreover, the quantitative analysis on the airtightness of cavity structure through leakage detection shows a helium leak rate of ~1.3 × 10−10 Pa⋅m3/s, which satisfies the requirement of the specification in the MIL-STD-883H. The cavity structure can also avoid an undesirable deep etching process and the problem caused by the mismatch of thermal expansion coefficients, which can be potentially further developed into an all-SiC piezoresistive pressure sensor employable for high temperature applications.


Author(s):  
Vygantas Usinskis ◽  
Ernestas Sutinys ◽  
Karolina Lapkauskaite ◽  
Emilijus Vaisnoras ◽  
Andrius Dzedzickis ◽  
...  

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