Design, fabrication, and modeling of high-speed metal-semiconductor-metal (MSM) photodetectors with indium-tin-oxide (ITO) and Ti/Pt/Au contacts

Author(s):  
Christian Beaulieu ◽  
Francois L. Gouin ◽  
Julian P. Noad ◽  
William Hartman ◽  
Ewa Lisicka-Skrzek ◽  
...  
2002 ◽  
Vol 41 (Part 2, No. 2A) ◽  
pp. L115-L117 ◽  
Author(s):  
Shoou-Jinn Chang ◽  
Yan-Kuin Su ◽  
Wen-Ray Chen ◽  
Jone F. Chen ◽  
Ming-Hong Chen ◽  
...  

2014 ◽  
Vol 21 (5) ◽  
pp. 732-735 ◽  
Author(s):  
Pi-Ying Cheng ◽  
Wen-Tse Hsiao ◽  
Chien-Kai Chung ◽  
Shih-Feng Tseng ◽  
Ien-Chang Liao

2001 ◽  
Vol 79 (17) ◽  
pp. 2838-2840 ◽  
Author(s):  
Necmi Biyikli ◽  
Tolga Kartaloglu ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Ekmel Ozbay

1993 ◽  
Vol 5 (11) ◽  
pp. 1313-1315 ◽  
Author(s):  
Jong-Wook Seo ◽  
C. Caneau ◽  
R. Bhat ◽  
I. Adesida

1994 ◽  
Vol 33 (Part 1, No. 7B) ◽  
pp. 4438-4441 ◽  
Author(s):  
Keiji Nakamura ◽  
Tomonori Imura ◽  
Hideo Sugai ◽  
Michiko Ohkubo ◽  
Katsutaro Ichihara

2003 ◽  
Vol 82 (14) ◽  
pp. 2344-2346 ◽  
Author(s):  
Necmi Biyikli ◽  
Ibrahim Kimukin ◽  
Tolga Kartaloglu ◽  
Orhan Aytur ◽  
Ekmel Ozbay

2003 ◽  
Vol 764 ◽  
Author(s):  
Ibrahim Kimukin ◽  
Necmi Biyikli ◽  
Tolga Kartaloglu ◽  
Orhan Aytür ◽  
Ekmel Ozbay

AbstractWe have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.


Sign in / Sign up

Export Citation Format

Share Document