scholarly journals High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts

2003 ◽  
Vol 82 (14) ◽  
pp. 2344-2346 ◽  
Author(s):  
Necmi Biyikli ◽  
Ibrahim Kimukin ◽  
Tolga Kartaloglu ◽  
Orhan Aytur ◽  
Ekmel Ozbay
2003 ◽  
Vol 764 ◽  
Author(s):  
Necmi Biyikli ◽  
Ibrahim Kimukin ◽  
Tolga Kartaloglu ◽  
Orhan Aytür ◽  
Ekmel Ozbay

AbstractWe report high-speed solar-blind AlGaN-based Schottky photodiodes. AlGaN/GaN heterostructure device layers were grown on sapphire substrate. The devices were fabricated on AlGaN/GaN heterostructuresusing a microwave compatible fabrication process. Schottky photodiodes with Au and indium-tin-oxide (ITO) Schottky contacts were fabricated. Current-voltage, spectral responsivity, and high-speed measurements were performed. Both Schottky samples exhibited very low sub-pA dark currents at high reverse bias. A bias dependent spectral responsivity was observed with a peak responsivity of 89 mA/W at 267 nm, and 44 mA/W at 263 nm for Au and ITO-Schottky devices respectively. Time-based high-frequency measurements at 267 nm resulted in pulse responses with rise times and pulse-widths as short as 13 ps and 74 ps respectively. The fastest solar-blind detector had a record 3-dB bandwidth of 1.10 GHz.


1995 ◽  
Author(s):  
Christian Beaulieu ◽  
Francois L. Gouin ◽  
Julian P. Noad ◽  
William Hartman ◽  
Ewa Lisicka-Skrzek ◽  
...  

2014 ◽  
Vol 21 (5) ◽  
pp. 732-735 ◽  
Author(s):  
Pi-Ying Cheng ◽  
Wen-Tse Hsiao ◽  
Chien-Kai Chung ◽  
Shih-Feng Tseng ◽  
Ien-Chang Liao

2001 ◽  
Vol 79 (17) ◽  
pp. 2838-2840 ◽  
Author(s):  
Necmi Biyikli ◽  
Tolga Kartaloglu ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Ekmel Ozbay

1994 ◽  
Vol 33 (Part 1, No. 7B) ◽  
pp. 4438-4441 ◽  
Author(s):  
Keiji Nakamura ◽  
Tomonori Imura ◽  
Hideo Sugai ◽  
Michiko Ohkubo ◽  
Katsutaro Ichihara

1998 ◽  
Vol 72 (25) ◽  
pp. 3317-3319 ◽  
Author(s):  
J. K. Sheu ◽  
Y. K. Su ◽  
G. C. Chi ◽  
M. J. Jou ◽  
C. M. Chang

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