scholarly journals High-Performance AlGaN-Based Visible-Blind Resonant Cavity Enhanced Schottky Photodiodes

2003 ◽  
Vol 764 ◽  
Author(s):  
Ibrahim Kimukin ◽  
Necmi Biyikli ◽  
Tolga Kartaloglu ◽  
Orhan Aytür ◽  
Ekmel Ozbay
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Speed ◽  
High Performance ◽  
Resonant Cavity ◽  
Schottky Contact ◽  
Uv Detector ◽  
Ito Thin Films ◽  
Schottky Devices ◽  
Visible Blind

AbstractWe have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.

scholarly journals High-Speed Visible-Blind Resonant Cavity Enhanced AlGaN Schottky Photodiodes

2003 ◽  
Vol 8 ◽  
Author(s):  
Necmi Biyikli ◽  
Tolga Kartaloglu ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Ekmel Ozbay
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Speed ◽  
Resonant Cavity ◽  
Schottky Contact ◽  
Uv Detector ◽  
Ito Thin Films ◽  
Schottky Devices ◽  
Visible Blind ◽  
Fast Pulse

We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/Al0.2Ga0.8N Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.

scholarly journals High-speed visible-blind GaN-based indium–tin–oxide Schottky photodiodes

2001 ◽  
Vol 79 (17) ◽  
pp. 2838-2840 ◽  
Author(s):  
Necmi Biyikli ◽  
Tolga Kartaloglu ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Ekmel Ozbay
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
High Speed ◽  
Visible Blind

scholarly journals Different electrode anodes used in OLED devices Diferentes eletrodos anodos usados em dispositivos OLEDs

2021 ◽  
Author(s):  
Emerson Roberto Santos ◽  
Thiago de Carvalho Fullenbach ◽  
Marina Sparvoli Medeiros ◽  
Luis da Silva Zambom ◽  
Roberto Koji Onmori ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Threshold Voltage ◽  
Indium Tin Oxide ◽  
Light Emitting Diode ◽  
Electrical Current ◽  
High Threshold ◽  
Diamond Coatings ◽  
Ito Thin Films ◽  
Order Of Magnitude

Transparent conductive oxides (TCOs) known as indium tin oxide (ITO) and fluorine tin oxide (FTO) deposited on glass were compared by different techniques and also as anodes in organic light-emitting diode (OLED) devices with same structure. ITO produced at laboratory was compared with the commercial one manufactured by different companies: Diamond Coatings, Displaytech and Sigma-Aldrich, and FTO produced at laboratory was compared with the commercial one manufactured by Flexitec Company. FTO thin films produced at laboratory presented the lowest performance measured by Hall effect technique and also by I-V curve of OLED device with low electrical current and high threshold voltage. ITO thin films produced at laboratory presented elevated sheet resistance in comparison with commercial ITOs (approximately one order of magnitude greater), that can be related by a high number of defects as discontinuity of the chemical lattice or low crystalline structure. In the assembly of OLED devices with ITO and FTO produced at laboratory, neither presented luminances. ITO manufactured by Sigma-Aldrich company presented better electrical and optical characteristics, as low electrical resistivity, good wettability, favorable transmittance, perfect physicalchemical stability and lowest threshold voltage (from 3 to 4.5 V) for OLED devices.

Effects of the Concentration of Indium-tin-oxide (ITO) Ink on the Characteristics of Directly-printed ITO Thin Films

2010 ◽  
Vol 57 (6(1)) ◽  
pp. 1794-1798 ◽  
Author(s):  
Jong-Woong Kim ◽  
Jangwoo Choi ◽  
Sung-Jei Hong ◽  
Jeong-In Han ◽  
Young-Sung Kim
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ito Thin Films

scholarly journals Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film

2021 ◽  
Author(s):  
Longfei Song ◽  
Tony Schenk ◽  
Emmanuel Defay ◽  
Sebastjan Glinsek
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Low Temperature Combustion ◽  
Transparent Electronics ◽  
Temperature Combustion ◽  
Ito Thin Films

Highly conductive (conductivity 620 S cm−1) and transparent ITO thin films are achieved at low temperature (350 °C) through effective combustion solution processing via multistep coating. The properties show potential for next generation flexible and transparent electronics.

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