Effects of low energy H-ion implantation on the optical properties of ZnMgO thin films

2015 ◽  
Author(s):  
Shantanu Saha ◽  
Saurabh Nagar ◽  
S. K. Gupta ◽  
Subhananda Chakrabarti
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Implantation ◽  
Low Energy

Investigations of electrical and optical properties of low energy ion irradiated α-Fe2O3 (hematite) thin films

2016 ◽  
Author(s):  
Indra Sulania ◽  
Jyoti Kaswan ◽  
Vinesh Attatappa ◽  
Ranjeet Kumar Karn ◽  
D. C. Agarwal ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Low Energy ◽  
Electrical And Optical Properties

Optical properties of porous GaAs formed by low energy ion implantation

Vacuum ◽  
2020 ◽  
Vol 171 ◽  
pp. 108976 ◽  
Author(s):  
Angélica Hernández ◽  
Yuriy Kudriavtsev ◽  
Cecilia Salinas-Fuentes ◽  
Carlos Hernández-Gutierrez ◽  
Rene Asomoza
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Low Energy ◽  
Porous Gaas

Tuning of fermi level in antimony telluride thin films by low-energy Fe−-ion implantation

2021 ◽  
Vol 127 (12) ◽  
Author(s):  
Jyoti Yadav ◽  
Rini Singh ◽  
M. D. Anoop ◽  
Nisha Yadav ◽  
N. Srinivasa Rao ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Fermi Level ◽  
Low Energy ◽  
Antimony Telluride

EFFECTS OF Ge DOPING THROUGH ION IMPLANTATION ON THE STRUCTURAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY SOL-GEL TECHNIQUE

2007 ◽  
Vol 21 (31) ◽  
pp. 5257-5263 ◽  
Author(s):  
S. W. XUE ◽  
X. T. ZU ◽  
X. XIANG ◽  
M. Y. CHEN ◽  
W. G. ZHENG
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Implantation ◽  
Deep Level ◽  
Sol Gel ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Near Band Edge ◽  
Structural And Optical Properties

ZnO thin films were first prepared by the sol–gel process, and then Ge ions were implanted into the ZnO films. The effects of ion implantation on the structural and optical properties of the ZnO films were investigated by X-ray diffraction, photoluminescence (PL), and optical transmittance measurements. Measurement results showed that the intensity of the (002) diffraction peak was decreased and the full width at half maximum was narrowed. PL emission was greatly extinguished after Ge ion implantation. Both the near band edge (NBE) excitonic UV emission at 391 nm and the defect related deep level emission centered at 470 nm in the visible region were decreased after Ge ion implantation. NBE peak and the absorption edge were observed to have a blueshift toward higher energy.

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