EFFECTS OF Ge DOPING THROUGH ION IMPLANTATION ON THE STRUCTURAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY SOL-GEL TECHNIQUE

ZnO thin films were first prepared by the sol–gel process, and then Ge ions were implanted into the ZnO films. The effects of ion implantation on the structural and optical properties of the ZnO films were investigated by X-ray diffraction, photoluminescence (PL), and optical transmittance measurements. Measurement results showed that the intensity of the (002) diffraction peak was decreased and the full width at half maximum was narrowed. PL emission was greatly extinguished after Ge ion implantation. Both the near band edge (NBE) excitonic UV emission at 391 nm and the defect related deep level emission centered at 470 nm in the visible region were decreased after Ge ion implantation. NBE peak and the absorption edge were observed to have a blueshift toward higher energy.

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Structural and optical properties of ZnO thin film prepared by sol-gel spin coating

Materials Science-Poland ◽

10.2478/msp-2020-0016 ◽

2020 ◽

Vol 38 (1) ◽

pp. 17-22

Author(s):

G Balakrishnan ◽

Vivek Sinha ◽

Yogesh Palai Peethala ◽

Manoj Kumar ◽

R.J. Golden Renjith Nimal ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Spin Coating ◽

Zinc Acetate Dihydrate ◽

Sol Gel ◽

Hexagonal Structure ◽

Zno Thin Films ◽

Zno Films ◽

Structural And Optical Properties ◽

Vis Spectroscopy

AbstractZinc oxide (ZnO) thin films were deposited on Si (1 0 0) and glass substrates by sol-gel spin coating technique. Zinc acetate dihydrate, monoethanolamine and isopropanol were used as the sources for precursor solution and the resulting gel was used for the preparation of ZnO thin films. The films were annealed at different temperatures (100 °C to 500 °C) and the effect of annealing on the structural and optical properties was investigated. X-ray diffraction (XRD) and UV-Vis spectroscopy were used for the analysis of the films. The XRD results indicated the polycrystalline hexagonal structure of the ZnO films with (0 0 2) orientation. The optical properties of the films were studied using UV-Vis spectrophotometer in the wavelength range of 190 – 1100 nm. The optical characterization of the ZnO thin films showed the high transmittance of ~90 % for the films annealed at 400 °C. The films showed the absorbance ~360 – 390 nm and bandgap values of 3.40 – 3.10 eV, depending on the annealing temperature of the films.

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Boron Doping Effects on the Structural and Optical Properties of Sol-Gel Transparent ZnO Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.547.145 ◽

2013 ◽

Vol 547 ◽

pp. 145-151 ◽

Cited By ~ 2

Author(s):

Sirirat T. Rattanachan ◽

P. Krongarrom ◽

Thipwan Fangsuwannarak

Keyword(s):

Thin Films ◽

Optical Properties ◽

Sol Gel ◽

Zno Thin Films ◽

Zno Films ◽

Structural And Optical Properties ◽

Preferential Growth ◽

Glass Substrates ◽

Doping Effects ◽

Coating Method

In this study, undoped and B-doped ZnO thin films were successfully deposited on the glass substrates by a sol-gel spin coating method. The influence of doping concentrations and the annealing temperature effects on the structural and optical properties of ZnO thin films were investigated. All of films exhibited polycrystalline structure, with a preferential growth along the c-axis plane and the optical transparency with visible transmittance was higher than 90%. The crystallite size was calculated using a well-known Scherrer’s formula and found to be in the range of 11-18 nm. The optical band gap of these films were determined and compared with those obtained for undoped ZnO thin film.

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