CMOS compatible fabrication process of MEMS resonator for timing reference and sensing application

The fabrication process for the designed MEMS resonator using surface-micromachined technology is presented in this paper. A 10-MHz Free-Free beam MEMS resonator is designed to vibrate in the second-mode shape, which is significant improvement compare to the fundamental mode. The design showed a Q value as high as 75,000, which is significant improvement compared to 8,400 VHF F-F beam MEMS resonator by K. Wang; and very low motional resistance (18kΩ). The surface-micromachined technology is used as the standard process for the design. The process is briefly described from the layout design to the experimental fabricated device.

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One-Chip Integration of RF MEMS Switched Capacitor and Power Amplifier Using CMOS-Compatible Post Fabrication Process

Journal of Electrical Engineering and Technology ◽

10.1007/s42835-020-00588-2 ◽

2020 ◽

Vol 16 (1) ◽

pp. 491-498

Author(s):

Hyunok Cho ◽

Milim Lee ◽

Changkun Park ◽

Jae Yeong Park

Keyword(s):

Power Amplifier ◽

Rf Mems ◽

Fabrication Process ◽

Switched Capacitor ◽

Cmos Compatible

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Subwavelength grating wideband reflectors with tapered sidewall profile

MRS Advances ◽

10.1557/adv.2015.18 ◽

2015 ◽

Vol 1 (23) ◽

pp. 1683-1691 ◽

Cited By ~ 2

Author(s):

W. Yu ◽

D. Wu ◽

X. Duan ◽

Y. Yi

Keyword(s):

Critical Role ◽

Fabrication Process ◽

Etching Process ◽

Band Edge ◽

High Contrast ◽

Subwavelength Grating ◽

Nanophotonic Devices ◽

Average Reflectance ◽

Cmos Compatible ◽

Simulation Results

AbstractOne main difference between practical device and ideal design for subwavelength grating structure is the tapered sidewall profile of grating, which is normally obtained by the practical CMOS-compatible fabrication and etching process. Our work has investigated the impacts of tapered sidewall profile on the subwavelength grating wideband reflector characteristics. Both zero-contrast gratings (ZCG) and high- contrast gratings (HCG) are numerically investigated in detail and the results show a distinct differences of the impacts of tapered sidewall profile of grating. The simulation results reveal that this factor play a critical role in determining the reflection bandwidth, average reflectance, and the band edge. Our study has potential in guiding the utilization of subwavelength grating wideband reflector on application of a variety of nanophotonic devices and their integration, as well as to facilitate the design of the fabrication process on the control of tapered sidewall profile.

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A low temperature fabrication process utilizing FIB implantation for CMOS compatible photovoltaic cells

10.1117/12.873111 ◽

2010 ◽

Author(s):

Jasbir N. Patel ◽

Clinton Landrock ◽

Badr Omrane ◽

Bozena Kaminska ◽

Bonnie L. Gray

Keyword(s):

Low Temperature ◽

Photovoltaic Cells ◽

Fabrication Process ◽

Cmos Compatible

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Fabrication Process and Electro-Thermal Modeling for the Cathode of the CMOS-Compatible Hot-Filament Vacuum Gauge

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.645-646.836 ◽

2015 ◽

Vol 645-646 ◽

pp. 836-840 ◽

Cited By ~ 2

Author(s):

Jia Qi Wang ◽

Jun Yu

Keyword(s):

Thermal Modeling ◽

Gas Pressure ◽

Fabrication Process ◽

Vacuum Gauge ◽

Heating Current ◽

Vacuum Measurement ◽

Gaseous Molecule ◽

Cmos Compatible ◽

Hot Filament ◽

Optimal Heating

The hot-filament vacuum gauge is a traditional gauge for the vacuum measurement below 10-1Pa. It consists of the cathode, grid and anode. The cathode is used to emit the electron to collide with a gaseous molecular to form a pair of ion and electron. The number of these ions is proportional to the gaseous molecule density and the gas pressure. Unlike the traditional gauge with the large dimension, this paper develops a CMOS-compatible hot-filament vacuum gauge. With it, the vacuum gauge and its control circuit can be fabricated monolithically on a chip which will decrease the noise and be easy to use. Besides that, the optimal heating current for the cathode is also considered in this paper. The electro-thermal modeling using COMSOL software is introduced to calculate the heating current for cathode. The results show that for 200μm×5μm×0.2μm tungsten resistor, 200mA current is needed to heat the tungsten resistor to 1800°C to emit the electron.

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