Feasibility study of a position-sensitive hemispheric CZT radiation detector (Conference Presentation)

Author(s):  
Anwar Hossain ◽  
Aleksey E. Bolotnikov ◽  
Giuseppe S. Camarda ◽  
Yonggang Cui ◽  
Rubi Gul ◽  
...  
2012 ◽  
Vol 39 (4) ◽  
pp. 1925-1935 ◽  
Author(s):  
B. Reniers ◽  
G. Landry ◽  
R. Eichner ◽  
A. Hallil ◽  
F. Verhaegen

2012 ◽  
Vol 20 (3) ◽  
pp. 269-276 ◽  
Author(s):  
Sangheum Eom ◽  
Hyoungsup Shin ◽  
Jungwon Kang ◽  
Hakjae Lee ◽  
Kisung Lee

Micromachines ◽  
2019 ◽  
Vol 10 (12) ◽  
pp. 835 ◽  
Author(s):  
Donatella Puglisi ◽  
Giuseppe Bertuccio

Compared with the most commonly used silicon and germanium, which need to work at cryogenic or low temperatures to decrease their noise levels, wide-bandgap compound semiconductors such as silicon carbide allow the operation of radiation detectors at room temperature, with high performance, and without the use of any bulky and expensive cooling equipment. In this work, we investigated the electrical and spectroscopic performance of an innovative position-sensitive semiconductor radiation detector in epitaxial 4H-SiC. The full depletion of the epitaxial layer (124 µm, 5.2 × 1013 cm−3) was reached by biasing the detector up to 600 V. For comparison, two different microstrip detectors were fully characterized from −20 °C to +107 °C. The obtained results show that our prototype detector is suitable for high resolution X-ray spectroscopy with imaging capability in a wide range of operating temperatures.


1999 ◽  
Vol 31 (1-6) ◽  
pp. 471-474
Author(s):  
G. Meesen ◽  
A. Poffijn ◽  
S. Van Gestel ◽  
P. Van Oostveldt

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