Current status and future works of high-power deep UV LEDs (Conference Presentation)

Author(s):  
Rakjun Choi
Keyword(s):  
Deep Uv ◽  
2018 ◽  
Vol 255 ◽  
pp. 1238-1243 ◽  
Author(s):  
Yan Li ◽  
Miloš Dvořák ◽  
Pavel N. Nesterenko ◽  
Nantana Nuchtavorn ◽  
Mirek Macka

Author(s):  
M. Shatalov ◽  
W. Sun ◽  
J. Yang ◽  
X. Hu ◽  
Yu. Bilenko ◽  
...  
Keyword(s):  
Deep Uv ◽  

2010 ◽  
Author(s):  
W. H. Liu ◽  
C. F. Chu ◽  
C. C. Cheng ◽  
K. H. Hsu ◽  
Y. T. Chung ◽  
...  
Keyword(s):  

2013 ◽  
Vol 10 (11) ◽  
pp. 1521-1524 ◽  
Author(s):  
Noritoshi Maeda ◽  
Hideki Hirayama

Author(s):  
Yusuke Tsukada ◽  
Hideki Hirayama ◽  
Masahiro Akiba ◽  
Noritoshi Maeda ◽  
Norihiko Kamata

Author(s):  
Hideki Hirayama ◽  
Yusuke Tsukada ◽  
Masahiro Akiba ◽  
Norihiko Kamata
Keyword(s):  
Deep Uv ◽  

Sensors ◽  
2016 ◽  
Vol 16 (3) ◽  
pp. 293 ◽  
Author(s):  
Francisco Arques-Orobon ◽  
Neftali Nuñez ◽  
Manuel Vazquez ◽  
Vicente Gonzalez-Posadas

2006 ◽  
Vol 16 (03) ◽  
pp. 751-777 ◽  
Author(s):  
ADRIAN POWELL ◽  
JASON JENNY ◽  
STEPHAN MULLER ◽  
H. McD. HOBGOOD ◽  
VALERI TSVETKOV ◽  
...  

In recent years SiC has metamorphisized from an R&D based materials system to emerge as a key substrate technology for a significant fraction of the world production of green, blue and ultraviolet LEDs. Emerging markets for SiC homoepitaxy include high-power switching devices and microwave devices. Applications for heteroepitaxial GaN-based structures on SiC substrates include lasers and microwave devices. In this paper we review the properties of SiC, assess the current status of substrate and epitaxial growth, and outline our expectations for SiC in the future.


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