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Gallium Nitride Materials and Devices XII
Latest Publications
TOTAL DOCUMENTS
25
(FIVE YEARS 0)
H-INDEX
2
(FIVE YEARS 0)
Published By SPIE
9781510606494, 9781510606500
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Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
Related Keywords
Current status and future works of high-power deep UV LEDs (Conference Presentation)
Gallium Nitride Materials and Devices XII
◽
10.1117/12.2250000
◽
2017
◽
Cited By ~ 2
Author(s):
Rakjun Choi
Keyword(s):
High Power
◽
Current Status
◽
Deep Uv
◽
Uv Leds
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Ultraviolet microcavity light-emitting diode with ion-implanted current aperture (Conference Presentation)
Gallium Nitride Materials and Devices XII
◽
10.1117/12.2249958
◽
2017
◽
Cited By ~ 1
Author(s):
Yuh-Shiuan Liu
◽
Tsung-Ting Kao
◽
Yuanzeng Zhu
◽
Young Jae Park
◽
Karan Mehta
◽
...
Keyword(s):
Light Emitting Diode
◽
Light Emitting
◽
Ion Implanted
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200-mm GaN/Si technology for power device applications (Conference Presentation)
Gallium Nitride Materials and Devices XII
◽
10.1117/12.2250249
◽
2017
◽
Author(s):
Takashi Egawa
Keyword(s):
Power Device
◽
Device Applications
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Impact of InGaN alloy disorder on LED properties (Conference Presentation)
Gallium Nitride Materials and Devices XII
◽
10.1117/12.2250936
◽
2017
◽
Author(s):
Claude Weisbuch
Keyword(s):
Ingan Alloy
◽
Alloy Disorder
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Use of sub-bandgap optical pumping to identify defects in AlGaN/GaN high electron mobility transistors (Conference Presentation)
Gallium Nitride Materials and Devices XII
◽
10.1117/12.2251166
◽
2017
◽
Author(s):
Fan Ren
◽
Stephen J. Pearton
◽
Tsung Sheng Kang
◽
David J. Cheney
◽
Brent P. Gila
Keyword(s):
Electron Mobility
◽
Optical Pumping
◽
High Electron Mobility Transistors
◽
High Electron
◽
High Electron Mobility
◽
Electron Mobility Transistors
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8-inch GaN on Si-based wafer-level chip-scale package (Conference Presentation)
Gallium Nitride Materials and Devices XII
◽
10.1117/12.2252465
◽
2017
◽
Author(s):
Jun-Youn Kim
Keyword(s):
Wafer Level
◽
Chip Scale Package
◽
Gan On Si
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Growth of tapered GaN nanorod and the study of its growth mechanism (Conference Presentation)
Gallium Nitride Materials and Devices XII
◽
10.1117/12.2249542
◽
2017
◽
Author(s):
Xu Zhang
◽
Charng-Gan Tu
◽
Yu-Feng Yao
◽
Chen-Yao Chao
◽
Sheng-Hung Chen
◽
...
Keyword(s):
Growth Mechanism
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Long wavelength emission on relaxed InGaN substrates (Conference Presentation)
Gallium Nitride Materials and Devices XII
◽
10.1117/12.2252290
◽
2017
◽
Author(s):
Armelle Even
◽
Gautier Laval
◽
Olivier Ledoux
◽
Pierre Ferret
◽
David Sotta
◽
...
Keyword(s):
Long Wavelength
◽
Wavelength Emission
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Current status and future on GaN power devices for automobile applications (Conference Presentation)
Gallium Nitride Materials and Devices XII
◽
10.1117/12.2254513
◽
2017
◽
Author(s):
Tetsu Kachi
Keyword(s):
Current Status
◽
Power Devices
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Gallium nitride: a material for future betavoltaic (Conference Presentation)
Gallium Nitride Materials and Devices XII
◽
10.1117/12.2252962
◽
2017
◽
Author(s):
Szymon Grzanka
◽
Piotr Rafal Laskowski
◽
Lucja Marona
◽
Gregory Targowski
◽
Barbara Zareba
◽
...
Keyword(s):
Gallium Nitride
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