Film growth mode and related film properties in pulsed laser-plasma deposition

1990 ◽  
Author(s):  
Simeon Metev ◽  
Krassimira Meteva
Keyword(s):  
Laser Plasma ◽  
Film Growth ◽  
Plasma Deposition ◽  
Pulsed Laser ◽  
Growth Mode ◽  
Film Properties

Growth Mechanism and Film Properties in Pulsed Laser-Plasma Deposition

1991 ◽  
Vol 236 ◽  
Author(s):  
S. Metev ◽  
K. Meteva
Keyword(s):  
Laser Plasma ◽  
Growth Process ◽  
Plasma Deposition ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Experimental Investigations ◽  
Direct Relation ◽  
Film Properties ◽  
Experimental Conditions ◽  
Laser Flux

AbstractIn the paper the results of a theoretical investigation of the growth process of laser-plasma deposited thin films are discussed. A kinetic approach has been used to establish direct relation between experimental conditions (laser flux density, substrate temperature) and film properties (thickness, structure). The results of some experimental investigations of the deposition process are presented confirming the general conclusions of the developed theoretical model.

Growth Mechanism and Film Properties in Pulsed Laser-Plasma Deposition

1991 ◽  
Vol 235 ◽  
Author(s):  
S. Metev ◽  
K. Meteva
Keyword(s):  
Laser Plasma ◽  
Growth Process ◽  
Plasma Deposition ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Experimental Investigations ◽  
Direct Relation ◽  
Film Properties ◽  
Experimental Conditions ◽  
Laser Flux

ABSTRACTIn the paper the results of a theoretical investigation of the growth process of laser-plasma deposited thin films are discussed. A kinetic approach has been used to establish direct relation between experimental conditions (laser flux density, substrate temperature) and film properties (thickness, structure). The results of some experimental investigations of the deposition process are presented confirming the general conclusions of the developed theoretical model.

Relation between Growth Precursors and Film Properties for Plasma Deposition of a-Si:H at Rates up to 100 Å/s

2000 ◽  
Vol 609 ◽  
Author(s):  
W.M.M. Kessels ◽  
A.H.M. Smets ◽  
J.P.M. Hoefnagels ◽  
M.G.H. Boogaarts ◽  
D.C. Schram ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Surface Reaction ◽  
Film Growth ◽  
Plasma Deposition ◽  
Reaction Probability ◽  
Film Properties ◽  
Deposition Rates ◽  
Minor Contribution ◽  
A Minor

ABSTRACTFrom investigations on the SiH3 and SiH radical density and the surface reaction probability in a remote Ar-H2-SiH4 plasma, it is unambiguously demonstrated that the a-Si:H film quality improves significantly with increasing contribution of SiH3 and decreasing contribution of very reactive (poly)silane radicals. Device quality a-Si:H is obtained at deposition rates up to 100 Å/s for conditions where film growth is governed by SiH3 (contribution ∼90%) and where SiH has only a minor contribution (∼2%). Furthermore, for SiH3 dominated film growth the effect of the deposition rate on the a-Si:H film properties with respect to the substrate temperature is discussed.

Design and installation of a CO2-pulsed laser plasma deposition system for the growth of mass product nanostructures

2013 ◽  
Vol 28 (13) ◽  
pp. 1747-1752 ◽  
Author(s):  
Muhammad Sajjad ◽  
Xiaoyan Peng ◽  
Jin Chu ◽  
Hongxin Zhang ◽  
Peter Feng
Keyword(s):  
Laser Plasma ◽  
Plasma Deposition ◽  
Pulsed Laser ◽  
Image Position

Abstract

Plasma parameters in pulsed laser-plasma deposition of thin films

1996 ◽  
pp. 122-125
Author(s):  
S. Metev ◽  
M. Ozegowski ◽  
G. Sepold ◽  
S. Burmester
Keyword(s):  
Thin Films ◽  
Laser Plasma ◽  
Plasma Deposition ◽  
Pulsed Laser ◽  
Plasma Parameters

Plasma parameters in pulsed laser-plasma deposition of thin films

1996 ◽  
Vol 96-98 ◽  
pp. 122-125 ◽  
Author(s):  
S. Metev ◽  
M. Ozegowski ◽  
G. Sepold ◽  
S. Burmester
Keyword(s):  
Thin Films ◽  
Laser Plasma ◽  
Plasma Deposition ◽  
Pulsed Laser ◽  
Plasma Parameters
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