Relation between Growth Precursors and Film Properties for Plasma Deposition of a-Si:H at Rates up to 100 Å/s

2000 ◽  
Vol 609 ◽  
Author(s):  
W.M.M. Kessels ◽  
A.H.M. Smets ◽  
J.P.M. Hoefnagels ◽  
M.G.H. Boogaarts ◽  
D.C. Schram ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Surface Reaction ◽  
Film Growth ◽  
Plasma Deposition ◽  
Reaction Probability ◽  
Film Properties ◽  
Deposition Rates ◽  
Minor Contribution ◽  
A Minor

ABSTRACTFrom investigations on the SiH3 and SiH radical density and the surface reaction probability in a remote Ar-H2-SiH4 plasma, it is unambiguously demonstrated that the a-Si:H film quality improves significantly with increasing contribution of SiH3 and decreasing contribution of very reactive (poly)silane radicals. Device quality a-Si:H is obtained at deposition rates up to 100 Å/s for conditions where film growth is governed by SiH3 (contribution ∼90%) and where SiH has only a minor contribution (∼2%). Furthermore, for SiH3 dominated film growth the effect of the deposition rate on the a-Si:H film properties with respect to the substrate temperature is discussed.

Electronic transport study of high deposition rate HWCVD a-Si:H by the microwavephotomixing technique

2001 ◽  
Vol 664 ◽  
Author(s):  
S.R. Sheng ◽  
R. Braunstein ◽  
B.P. Nelson ◽  
Y. Xu
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Flow Rate ◽  
Electronic Transport ◽  
High Deposition Rate ◽  
Deposition Pressure ◽  
Film Properties ◽  
High Quality ◽  
Deposition Rates ◽  
Potential Fluctuations

ABSTRACTThe electronic transport properties of high deposition rate a-Si:H films prepared by HWCVD have been investigated in detail by employing the microwave photomixing technique. The high deposition rates (up to 1 µm/min.) were achieved by adding a second filament, increasing deposition pressure, silane flow rate, and decreasing filament-to-substrate distance. The effect of the deposition rate on the resultant film properties with respect to the substrate temperature, deposition pressure and silane flow rate was studied. It was found that the film transport properties do not change monotonically with increasing deposition rate. The photoconductivity peaks at ∼70-90 Å/s, where both the drift mobility and lifetime peak, consistent with the deposition rate dependence of the range and depth of the potential fluctuations. High quality, such as a photoconductivity-to-dark-conductivity ratio of ∼105 and nearly constant low charged defect density, can be maintained at deposition rates up to ∼150 Å/s, beyond which the film properties deteriorate rapidly as a result of an enhanced effect of the long-range potential fluctuations due to a considerable increase in the concentration of the charged defects. Our present results indicate that medium silane flow rate, low pressure, and higher substrate temperature are generally required to maintain high quality films at high deposition rates.

Deposition of High Quality SiO2 Films Using Teos by ECR Plasma

1995 ◽  
Vol 396 ◽  
Author(s):  
K. Sano ◽  
H. Tamamaki ◽  
M. Nomura ◽  
S. Wickramanayaka ◽  
Y. Nakanishi ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Film Properties ◽  
High Quality ◽  
Deposition Rates ◽  
Sio2 Films ◽  
Silicon Source ◽  
Ecr Plasma

AbstractSiO2 thin firms were fabricated in a remote electron cyclotron resonance (ECR) plasma by tctraethoxysilane (TEOS) as the silicon source. Oxygen was used as the plasma gas. A mesh was placed between the TEOS gas outlet and the substrate. In the present investigation a-SiO2 films were deposited with and without the mesh and film properties were studied comparatively. The deposition rate increased when the mesh was attached. The optimum deposition rate is observed when the mesh voltage was zero, that is the mesh was grounded. The deposition rates of both methods were also dependnt on the TEOS flow rate, applied microwave power and the substrate temperature. These three parameters have significant roles in controlling the film quality. Good quality SiO2 films can be obtained with a higher deposition rate when a mesh is attached.

Chemistry of SiO2 Plasma Deposition

1990 ◽  
Vol 204 ◽  
Author(s):  
Donald L. Smith ◽  
Andrew S. Alimonda ◽  
Tzu-Chin Chuang
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Plasma Deposition ◽  
Electron Trapping ◽  
Electrical Characteristics ◽  
Rf Power ◽  
Film Analysis ◽  
Minor Contribution ◽  
Thermal Oxide ◽  
A Minor

ABSTRACTThe chemistry of SiO2 deposition from N20-SiH4 plasma was studied by line-ofsight mass spectrometry coupled with film analysis. If rf power and N2O flow are sufficient, more than enough O atoms are available to convert all of the SiH4 to SiO2, and good electrical characteristics (IV and breakdown) are then obtained with or without He dilution. Gas-phase SimHn(OH)p species make a minor contribution to the deposition and may be the source of the OH in the film. Both [OH] and electron trapping are much larger than for thermal oxide, with or without He dilution.

Low Temperature Deposited High Quality ITO Films Prepared by E-Beam Evaporation

1990 ◽  
Vol 187 ◽  
Author(s):  
C. S. Chang ◽  
J. C. Wang ◽  
L. C. Kuo
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Optimal Condition ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Electron Beam Evaporation ◽  
Film Properties ◽  
High Quality ◽  
Ito Films

AbstractAn electron beam evaporation method has been used to prepare tin doped indium oxide (ITO) films with 95 wt.% In2O3 and 5 wt.% SnO2 in an oxygen atmosphere. It was found that the deposition rate and oxygen pressure strongly influence the film properties when the substrate temperature was lower than 200°C. In an optimal condition, highly transparent (transmittance ˜ 90% at wavelength 570 nm) and conductive (resistivity – 3×10−4Ω-cm) films of thickness around 2000 Å at substrate temperature as low as 180°C can be obtained.

Influence de la température de substrat sur la croissance et les propriétés des films minces de silicium amorphe déposés par pulvérisation cathodique

2003 ◽  
Vol 81 (11) ◽  
pp. 1293-1302
Author(s):  
S Abdesselem ◽  
A Ouhab ◽  
M S Aida
Keyword(s):  
Substrate Temperature ◽  
Film Growth ◽  
Defect Density ◽  
Deposition Method ◽  
Rf Power ◽  
Film Properties ◽  
Visible Absorption ◽  
Knowing That ◽  
Spraying Method

We deposit thin films of a-Si:H by RF diode spray on substrate with temperatures varying from 200 to 500 °C. Knowing that this deposition method is violent when compared with the plasma-assisted deposition method, we have used low RF power to limit the energy of the Ar ions bombarding the surface of the growing film. Characterization of the films by UV–visible absorption spectroscopy suggests that the influence of the substrate temperature can be classified into three different regimes: (i) low temperature, Ts < 300 °C: the films show a strong disorder, the hydrogen is bound only in the polyhydric configuration; (ii) intermediate temperature, 300 °C < Ts < 400 °C: film growth is rapid, the films present a lower defect density; this may be the best regime to make good quality a-Si:H films using the spraying method; (iii) high temperature, Ts > 400 °C: the films are more organized, but less hydrogenated. The substrate temperature influences the film properties by modifying the growing mechanism through a control of the reactions taking place at the plasma–substrate interface, where the hydrogen dynamics play a fundamental role.[Journal translation]

The Microstructure of Copper Films Deposited by E-Beam Evaporation onto Thin Polyimide Films

1984 ◽  
Vol 40 ◽  
Author(s):  
J. T. Wetzel ◽  
D. A. Smith ◽  
G. Appleby-Mougham
Keyword(s):  
Electron Beam ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Grain Growth ◽  
Film Growth ◽  
Electron Beam Evaporation ◽  
Copper Films ◽  
Polyimide Films ◽  
Deposition Rates ◽  
Substrate Temperatures

AbstractCopper was deposited by electron beam evaporation onto both freshly cleaved bare and polyimide-coated (001) NaCl at substrate temperatures of 20°, 100°, 200° and 300°C at rates of 2 and 20,Åsec−1. For all substrate temperatures and deposition rates investigated, the Volmer-Weber mode of film growth was observed for copper both on polyimide and on NaCl. Comparisons of film growth on the two substrates for a constant substrate temperature revealed differences in film thickness at which copper became continuous or formed a completely coalesced film. It was found that copper grown on polyimide formed continuous and completely coalesced films at smaller film thicknesses than on NaCI. However once a completely coalesced film was obtained, grain growth in the copper films proceeded more rapidly on NaC1 substrates than on polyimide substrates.

Compositional characterization of microwave plasma a-Si: H films

1983 ◽  
Vol 61 (4) ◽  
pp. 582-590 ◽  
Author(s):  
J. F. Currie ◽  
P. Depelsenaire ◽  
J. P. Huot ◽  
L. Paquin ◽  
M. R. Wertheimer ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Hydrogen Concentration ◽  
Film Growth ◽  
Microwave Plasma ◽  
Depth Resolution ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Amorphous Hydrogenated Silicon ◽  
Film Interface

The concentration of hydrogen in amorphous hydrogenated silicon films prepared by microwave glow discharge decomposition of silane has been measured as a function of several fabrication parameters: substrate temperature, deposition rate, and partial pressures of silane and of argon. Hydrogen concentration profiles have been obtained by two techniques: elastic recoil detection (ERD) with a 30 MeV 35Cl beam, and by the resonant nuclear reaction 15N + 1H → 12C + 4He + γ. Both offer very high depth resolution (in the order of 100 Å) and have revealed important inhomogencities in chemical composition, both at the free surface and the substrate – film interface. Using standard infrared absorption measurements between 1950 and 2150 cm−1, the intensities of the lines normally associated with SiH, SiH2, and SiH3 bonds were measured. As has been previously reported for reactively sputtered films for some fabrication conditions the sum of the three intensities is not consistent with the total hydrogen concentration obtained from the nuclear measurements. The average hydrogen concentration decreases with increasing substrate temperature, changes little with deposition rate, and increases as the silane to argon ratio is increased. These observations are related to the chemical reactions which take place in the plasma, and at the plasma–film interface during film growth.

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