Optical characterization of polycrystalline silicon thin films

1996 ◽  
Author(s):  
William A. McGahan ◽  
Blaine R. Spady ◽  
Blaine D. Johs ◽  
Olivier Laparra
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Optical Characterization ◽  
Silicon Thin Films

Characterization of Defects in Polycrystalline Silicon Thin Films Using Chemical Etching, Hydrogenation, and Raman Spectroscopy

2008 ◽  
Vol 47 (1) ◽  
pp. 54-58 ◽  
Author(s):  
Kuninori Kitahara ◽  
Hiroya Ogasawara ◽  
Junji Kambara ◽  
Mitsunori Kobata ◽  
Yasutaka Ohashi
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Chemical Etching ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films

Optical characterization of hydrogenated silicon thin films using interference technique

2000 ◽  
Vol 88 (4) ◽  
pp. 1907-1915 ◽  
Author(s):  
Tatiana Globus ◽  
Gautam Ganguly ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Thin Films ◽  
Optical Characterization ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films

Grain boundary light beam induced current: A characterization of bonded silicon wafers and polycrystalline silicon thin films for diffusion length extraction

2016 ◽  
Vol 213 (7) ◽  
pp. 1728-1737 ◽  
Author(s):  
Orman Gref ◽  
Ana-Maria Teodoreanu ◽  
Rainer Leihkauf ◽  
Heiko Lohrke ◽  
Martin Kittler ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Light Beam ◽  
Polycrystalline Silicon ◽  
Diffusion Length ◽  
Silicon Wafers ◽  
Induced Current ◽  
Silicon Thin Films

Synthesis and characterization of large-grain solid-phase crystallized polycrystalline silicon thin films

2014 ◽  
Vol 32 (6) ◽  
pp. 061509 ◽  
Author(s):  
Avishek Kumar ◽  
Felix Law ◽  
Goutam K. Dalapati ◽  
Gomathy S. Subramanian ◽  
Per I. Widenborg ◽  
...  
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Synthesis And Characterization ◽  
Silicon Thin Films

Characterization of Polycrystalline Silicon Thin Films by Photoluminescence

1990 ◽  
Vol 182 ◽  
Author(s):  
R. Pandya ◽  
K. Shahzad
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Qualitative Explanation ◽  
Silicon Thin Films ◽  
Pl Spectrum ◽  
Recombination Velocity ◽  
Quartz Substrates

AbstractPhotoluminescence (PL) measurements have been carried out in hydrogenated and as deposited polycrystalline silicon thin films deposited on quartz substrates. Behavior of the PL spectrum as a function of temperature and intensity in the hydrogenated samples is reported. A mechanism that provides a qualitative explanation for the observed PL results is described. In the unhydrogenated sample the signal was much weaker and we were unable to observe any signals over an appreciable range of intensity and temperatures. The cause for much lower signals in the unhydrogenated sample is most likely due to higher surface recombination velocity.

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