Residual stress analysis of anodic aluminum oxide thin films for infrared emitter device application.

Author(s):  
Young Bong Shin ◽  
Hee Chul Lee
2015 ◽  
Vol 1 (1) ◽  
pp. 69-77 ◽  
Author(s):  
Qi Fan ◽  
◽  
Nitu Mandal ◽  
Mukul Dubey ◽  
Rakesh Gupta ◽  
...  

2011 ◽  
Vol 519 (7) ◽  
pp. 2308-2312 ◽  
Author(s):  
Hong Zhuo ◽  
Fuchuan Peng ◽  
Limei Lin ◽  
Yan Qu ◽  
Fachun Lai

1988 ◽  
Vol 130 ◽  
Author(s):  
Carla J. Shute ◽  
J. B. Cohen ◽  
D. A. Jeannottea

AbstractResidual stress has been measured as a function of layer thickness in thin films of an Al alloy on oxidized Si by the x-ray “d” versus sin2ψ technique. Samples with and without a passivation layer were examined. The results show an increase in residual stress with decreasing film thickness for the passivated samples and indicates that the interface between the metal film and SiO2 may be a region of high stress.


2013 ◽  
Vol 26 (3) ◽  
pp. 035001 ◽  
Author(s):  
M Trezza ◽  
C Cirillo ◽  
A I Vorobjeva ◽  
E A Outkina ◽  
S L Prischepa ◽  
...  

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