A comparative study of the spin-orbit interactions in Pancharatnam-Berry phase elements and in normal incidence of a light beam at a sharp interface

Author(s):  
Huiling Luo ◽  
Xiaohui Ling ◽  
Xinxing Zhou
2020 ◽  
Vol 69 (3) ◽  
pp. 034202
Author(s):  
Hui-Ling Luo ◽  
Xiao-Hui Ling ◽  
Xin-Xing Zhou ◽  
Hai-Lu Luo

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Ruirui Zhang ◽  
Manna Gu ◽  
Rui Sun ◽  
Xiangyu Zeng ◽  
Yuqin Zhang ◽  
...  

Abstract Artificial nanostructures in metasurfaces induce strong spin–orbit interactions (SOIs), by which incident circularly polarized light can be transformed into two opposite spin components. The component with an opposite helicity to the incident light acquires a geometric phase and is used to realize the versatile functions of the metasurfaces; however, the other component, with an identical helicity, is often neglected as a diffused background. Here, by simultaneously manipulating the two spin components originating from the SOI in plasmonic metasurfaces, independent wavefields in the primary and converted spin channels are achieved; the wavefield in the primary channel is controlled by tailoring the dynamic phase, and that in the converted channel is regulated by designing the Pancharatnam–Berry phase in concurrence with the dynamic phase. The scheme is realized by generating optical lattice fields with different topologies in two spin channels, with the metasurfaces composed of metal nanoslits within six round-apertures mimicking the multi-beam interference. This study demonstrates independent optical fields in a dual-spin channel based on the SOI effect in the metasurface, which provides a higher polarization degree of freedom to modify optical properties at the subwavelength scale.


2021 ◽  
Vol 96 (5) ◽  
pp. 055303
Author(s):  
S Aghababaei ◽  
H Moradpour ◽  
G Rezaei ◽  
S Khorshidian

Author(s):  
J. Nitta

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.


2021 ◽  
Vol 23 (5) ◽  
pp. 3668-3678
Author(s):  
Angela Rodriguez-Serrano ◽  
Fabian Dinkelbach ◽  
Christel M. Marian

Multireference quantum chemical calculations were performed in order to investigate the (reverse) intersystem crossing ((R)ISC) mechanisms of 4,5-di(9H-carbazol-9-yl)-phthalonitrile (2CzPN).


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