Equivalent explosion simulation model for studying the laser-induced damage process of KDP crystal

2019 ◽  
Author(s):  
Shengfei Wang ◽  
Xianyang Lei ◽  
Jian Wang ◽  
Zhichao Liu ◽  
Jianfeng Zhang ◽  
...  
Keyword(s):  
Simulation Model ◽  
Kdp Crystal ◽  
Damage Process ◽  
Laser Induced Damage

Simulation of Large Scale KDP Crystal Polishing by Computer Controlled Micro-Nano Deliquescence

2012 ◽  
Vol 497 ◽  
pp. 165-169 ◽  
Author(s):  
He Ping Zhang ◽  
Dong Ming Guo ◽  
Xu Wang ◽  
Hang Gao
Keyword(s):  
Large Scale ◽  
Surface Condition ◽  
Single Point ◽  
Damage Threshold ◽  
Diamond Turning ◽  
Water Soluble ◽  
Optical Elements ◽  
Kdp Crystal ◽  
Computer Controlled ◽  
Laser Induced Damage

Although Single Point Diamond Turning (SPDT) can do pretty well in optical surfacing of large scale KDP crystal, both the surface accuracy and integrity are considerably high; meanwhile as the defects of micro-waveness and stress are inevitable, the laser-induced damage threshold of KDP optical elements after SPDT still cannot be satisfied. Because of the characters of deliquescent and water-soluble, the process of computer controlled Micro-nano deliquescence is attempted to remove the residual micro-waveness on KDP surface after SPDT. Based on the assumption of Preston and the characters of Micro-nano deliquescence, the model of material removal ratio is suggested, the dwell time for ascertained KDP surface is solved, the processing of computer controlled Micro-nano deliquescence is simulated and the processed surface condition on theory is obtained. Besides, the influences of different parameters on the surfacing efficiency and accuracy are analyzed. Finally, three polishing tracks are comparatively analyzed. The simulation results are quite important in guiding the experimental polishing of large scale KDP by computer controlled Micro-nano deliquescence

Influences of surface defects on the laser-induced damage performances of KDP crystal

2018 ◽  
Vol 57 (10) ◽  
pp. 2638 ◽  
Author(s):  
Shengfei Wang ◽  
Jian Wang ◽  
Qiao Xu ◽  
Xiangyang Lei ◽  
Zhichao Liu ◽  
...  
Keyword(s):  
Surface Defects ◽  
Kdp Crystal ◽  
Laser Induced Damage

Effect of Ba in KDP crystal on the wavelength dependence of laser-induced damage

2011 ◽  
Vol 9 (9) ◽  
pp. 091402-91403 ◽  
Author(s):  
高慧 Hui Gao ◽  
孙洵 Xun Sun ◽  
许心光 Xinguang Xu ◽  
刘宝安 Baoan Liu ◽  
徐明霞 Mingxia Xu ◽  
...  
Keyword(s):  
Wavelength Dependence ◽  
Kdp Crystal ◽  
Laser Induced Damage

Time-resolved holographic imaging of femtosecond laser-induced damage process in dielectric thin films

2016 ◽  
Author(s):  
Andrius Melninkaitis ◽  
Balys Momgaudis ◽  
Robertas Grigutis ◽  
Linas Smalakys ◽  
Nerijus Šiaulys ◽  
...  
Keyword(s):  
Thin Films ◽  
Femtosecond Laser ◽  
Dielectric Thin Films ◽  
Time Resolved ◽  
Holographic Imaging ◽  
Damage Process ◽  
Laser Induced Damage

Millisecond laser-induced damage process of (001) silicon wafer

2021 ◽  
Vol 60 (09) ◽  
Author(s):  
Zhichao Jia ◽  
Wei Wang ◽  
Xinhua Li ◽  
Lingyun Hao
Keyword(s):  
Silicon Wafer ◽  
Damage Process ◽  
Laser Induced Damage ◽  
Millisecond Laser

scholarly journals Rapid growth of a long-seed KDP crystal

2020 ◽  
Vol 8 ◽  
Author(s):  
Duanyang Chen ◽  
Bin Wang ◽  
Hu Wang ◽  
Xiangyu Zhu ◽  
Ziyuan Xu ◽  
...  
Keyword(s):  
X Ray Diffraction ◽  
Seed Length ◽  
Kdp Crystal ◽  
Third Harmonic ◽  
X Ray ◽  
Good Crystalline Quality ◽  
Oriented Samples ◽  
Test Points ◽  
Laser Induced Damage ◽  
Type Crystal

To reduce the seed length while maintaining the advantages of the cuboid KDP-type crystal, a long-seed KDP crystal with size $471~\text{mm}\times 480~\text{mm}\times 400~\text{mm}$ is rapidly grown. With almost the same high cutting efficiency to obtain third harmonic generation oriented samples, this long-seed KDP-type crystal can be grown with a shorter seed than that of the cuboid KDP-type crystal. The full width at half maximum of the high-resolution X-ray diffraction of the (200) crystalline face is 28.8 arc seconds, indicating that the long-seed KDP crystal has good crystalline quality. In the wavelength range of 377–1022 nm, the transmittance of the long-seed KDP crystal is higher than 90%. The fluence for the 50% probability of laser-induced damage (LID) is $18.5~\text{J}/\text{cm}^{2}$ (3 ns, 355 nm). Several test points survive when the laser fluence exceeds $30~\text{J}/\text{cm}^{2}$ (3 ns, 355 nm), indicating the good LID performance of the long-seed KDP crystal. At present, the growth of a long-seed DKDP crystal is under way.

UHV-TEM studies of laser-induced damage

1991 ◽  
Vol 49 ◽  
pp. 632-633
Author(s):  
T.S. Savage ◽  
R. Ai ◽  
D. Dunn ◽  
L.D. Marks
Keyword(s):  
Surface Science ◽  
Rapid Heating ◽  
Local Heating ◽  
Routine Practice ◽  
Transmission Electron ◽  
Northwestern University ◽  
Laser Induced Damage ◽  
Set Up ◽  
Focusing Lens ◽  
Diffusion Of Impurities

The use of lasers for surface annealing, heating and/or damage has become a routine practice in the study of materials. Lasers have been closely looked at as an annealing technique for silicon and other semiconductors. They allow for local heating from a beam which can be focused and tuned to different wavelengths for specific tasks. Pulsed dye lasers allow for short, quick bursts which can allow the sample to be rapidly heated and quenched. This short, rapid heating period may be important for cases where diffusion of impurities or dopants may not be desirable.At Northwestern University, a Candela SLL - 250 pulsed dye laser, with a maximum power of 1 Joule/pulse over 350 - 400 nanoseconds, has been set up in conjunction with a Hitachi UHV-H9000 transmission electron microscope. The laser beam is introduced into the surface science chamber through a series of mirrors, a focusing lens and a six inch quartz window.

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

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