Optical and structural behaviour of InAs quantum dots grown on the Si substrate without Si-Ge graded layer and without Migration Enhanced Epitaxy layer
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2010 ◽
Vol 42
(5)
◽
pp. 1536-1539
2011 ◽
Vol 323
(1)
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pp. 426-430
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2011 ◽
Vol 208
(9)
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pp. 2104-2107
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2016 ◽
Vol E99.C
(3)
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pp. 381-384
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