ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.
Using c-AFM and s-SNOM, we show the influence of local inhomogeneities on the LAO/STO 2DEG formation by mapping its distribution. The nanoscopic arrangement of insulating regions alters the conductive behavior down to low temperatures.
Topological phase transition coupled with spin-valley physics in ferroelectric oxide heterostructures
