Hydrogenated amorphous-silicon-nitride-based photonic light-emitting devices

Mapping Intimacies ◽

10.1117/12.382796 ◽

2000 ◽

Author(s):

Ali Serpenguzel

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Light Emitting ◽

Amorphous Silicon Nitride ◽

Light Emitting Devices ◽

Hydrogenated Amorphous

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Optoelectronic Characteristics of Direct-Current and Alternating-Current White Thin-Film Light-Emitting Diodes Based on Hydrogenated Amorphous Silicon Nitride Film

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.917330 ◽

2008 ◽

Vol 55 (4) ◽

pp. 978-985 ◽

Author(s):

Rong-Hwei Yeh ◽

Tai-Rong Yu ◽

Te-Cheng Chung ◽

Shih-Yung Lo ◽

Jyh-Wong Hong

Keyword(s):

Thin Film ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Direct Current ◽

Hydrogenated Amorphous Silicon ◽

Nitride Film ◽

Silicon Nitride Film ◽

Light Emitting ◽

Amorphous Silicon Nitride ◽

Hydrogenated Amorphous

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Metastable defects in hydrogenated amorphous silicon nitride

10.31979/etd.455y-6kvb ◽

1992 ◽

Author(s):

Elaheh Sigari

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Silicon Nitride ◽

Hydrogenated Amorphous

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Thermal annealing of light−induced metastable defects in hydrogenated amorphous silicon nitride

Applied Physics Letters ◽

10.1063/1.106230 ◽

1991 ◽

Vol 59 (14) ◽

pp. 1723-1725 ◽

Author(s):

E. D. Tober ◽

J. Kanicki ◽

M. S. Crowder

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Thermal Annealing ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Silicon Nitride ◽

Hydrogenated Amorphous

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Nitrogen bonding environments and local order in hydrogenated amorphous silicon nitride films studied by Raman spectroscopy

Journal of Applied Physics ◽

10.1063/1.370604 ◽

1999 ◽

Vol 85 (11) ◽

pp. 7899-7904 ◽

Author(s):

J. Bandet ◽

B. Despax ◽

M. Caumont

Keyword(s):

Raman Spectroscopy ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Local Order ◽

Amorphous Silicon Nitride ◽

Silicon Nitride Films ◽

Hydrogenated Amorphous

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Hydrogenated amorphous silicon nitride (a-SiNx:H) as surface passivation layer

Surface Passivation of Industrial Crystalline Silicon Solar Cells ◽

10.1049/pbpo106e_ch11 ◽

2018 ◽

pp. 179-195

Author(s):

Machteld Lamers ◽

Arthur Weeber

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Surface Passivation ◽

Hydrogenated Amorphous Silicon ◽

Passivation Layer ◽

Amorphous Silicon Nitride ◽

Hydrogenated Amorphous

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Visible photoluminescence from low temperature deposited hydrogenated amorphous silicon nitride

Solid State Communications ◽

10.1016/0038-1098(96)00064-6 ◽

1996 ◽

Vol 98 (4) ◽

pp. 273-277 ◽

Author(s):

Atilla Aydinli ◽

Ali Serpengüzel ◽

Didem Vardar

Keyword(s):

Silicon Nitride ◽

Low Temperature ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Silicon Nitride ◽

Visible Photoluminescence ◽

Hydrogenated Amorphous

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Investigations of N-H and Si-N Bonding Configurations in Hydrogenated Amorphous Silicon Nitride Films by Infrared Absorption Spectroscopy

Japanese Journal of Applied Physics ◽

10.1143/jjap.24.l861 ◽

1985 ◽

Vol 24 (Part 2, No. 11) ◽

pp. L861-L863 ◽

Author(s):

Shiro Narikawa ◽

Yoshimi Kojima ◽

Shaw Ehara

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Absorption Spectroscopy ◽

Infrared Absorption ◽

Hydrogenated Amorphous Silicon ◽

Infrared Absorption Spectroscopy ◽

Amorphous Silicon Nitride ◽

Silicon Nitride Films ◽

Hydrogenated Amorphous

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Optical properties and local bonding configurations of hydrogenated amorphous silicon nitride thin films

Journal of Applied Physics ◽

10.1063/1.2356915 ◽

2006 ◽

Vol 100 (7) ◽

pp. 073516 ◽

Author(s):

J. J. Mei ◽

H. Chen ◽

W. Z. Shen ◽

H. F. W. Dekkers

Keyword(s):

Optical Properties ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Silicon Nitride ◽

Local Bonding ◽

Hydrogenated Amorphous

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Nitrogen Dangling Bonds in Hydrogenated Amorphous Silicon Nitride Thin Films

10.7567/ssdm.1992.pa2-4 ◽

1992 ◽

Author(s):

J. Kanicki ◽

W. L. Warren ◽

E. H. Poindexter

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Dangling Bonds ◽

Amorphous Silicon Nitride ◽

Hydrogenated Amorphous

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Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD systems

MRS Proceedings ◽

10.1557/proc-68-175 ◽

1986 ◽

Vol 68 ◽

Author(s):

Nancy Voke ◽

Jerzy Kanicki

Keyword(s):

Silicon Nitride ◽

Electrical Properties ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Optical And Electrical Properties ◽

Amorphous Silicon Nitride ◽

Full Characterization ◽

Silicon Nitride Films ◽

Hydrogenated Amorphous

Hydrogenated amorphous silicon nitride films, prepared in various commercially available plasma enhanced chemical vapor deposition systems, have been investigated in terms of different deposition conditions.The full characterization of these gate insulators has been carried out by different techniques.Experimental data and interesting findings obtained from this study are presented.Special attention has been devoted to the influence of hydrogen on optical and electrical properties.

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