Epitaxial strain effects on superconducting and transport properties of La 2-x Sr x CuO 4+δ

2002 ◽  
Author(s):  
Xiaoxing Xi ◽  
Weidong Si ◽  
X. H. Zeng ◽  
A. Soukiassian ◽  
C. L. Jia ◽  
...  
Author(s):  
Hua Li ◽  
Gang Li

In this work, we model the strain effects on the electrical transport properties of Si/Ge nanocomposite thin films. We utilize a two-band k·p theory to calculate the variation of the electronic band structure as a function of externally applied strains. By using the modified electronic band structure, electrical conductivity of the Si/Ge nanocomposites is calculated through a self-consistent electron transport analysis, where a nonequilibrium Green’s function (NEGF) is coupled with the Poisson equation. The results show that both the tensile uniaxial and biaxial strains increase the electrical conductivity of Si/Ge nanocomposite. The effects are more evident in the biaxial strain cases.


RSC Advances ◽  
2016 ◽  
Vol 6 (84) ◽  
pp. 80431-80437 ◽  
Author(s):  
Xiaohui Yu ◽  
Huilong Dong ◽  
Lu Wang ◽  
Youyong Li

The band gap of TiO2 nanotubes can be effectively reduced or enhanced by applying isotropic strain along the axial direction. ΔE for the armchair (n,n) TiO2 nanotubes is reduced with tensile strain.


2006 ◽  
Vol 88 (14) ◽  
pp. 142903 ◽  
Author(s):  
W. Ramadan ◽  
S. B. Ogale ◽  
S. Dhar ◽  
S. X. Zhang ◽  
D. C. Kundaliya ◽  
...  

2012 ◽  
Vol 111 (7) ◽  
pp. 07D706 ◽  
Author(s):  
H. Meng ◽  
Y. Q. Zhang ◽  
X. W. Wang ◽  
Y. L. Tang ◽  
Z. H. Wang ◽  
...  

Nanoscale ◽  
2016 ◽  
Vol 8 (22) ◽  
pp. 11658-11673 ◽  
Author(s):  
V. Hung Nguyen ◽  
Trinh X. Hoang ◽  
P. Dollfus ◽  
J.-C. Charlier

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