Influence of the emitter-base junction depth on the low frequency noise of Si/SiGeC heterojunction bipolar transistors

2004 ◽  
Author(s):  
Patrice Benoit ◽  
Cyril Chay ◽  
Colette Delseny ◽  
Fabien Pascal ◽  
Pierre Llinares ◽  
...  
2011 ◽  
Vol 58 (12) ◽  
pp. 4196-4203
Author(s):  
M. Fjer ◽  
S. Persson ◽  
E. Escobedo-Cousin ◽  
A. G. O'Neill

Sign in / Sign up

Export Citation Format

Share Document