Optical and x-ray characterization of two novel CMOS image sensors

Author(s):  
Sarah E. Bohndiek ◽  
Costas D. Arvanitis ◽  
Cristian Venanzi ◽  
Gary J. Royle ◽  
Andy T. Clark ◽  
...  
Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5447
Author(s):  
Calvin Yi-Ping Chao ◽  
Shang-Fu Yeh ◽  
Meng-Hsu Wu ◽  
Kuo-Yu Chou ◽  
Honyih Tu ◽  
...  

In this paper we present a systematic approach to sort out different types of random telegraph noises (RTN) in CMOS image sensors (CIS) by examining their dependencies on the transfer gate off-voltage, the reset gate off-voltage, the photodiode integration time, and the sense node charge retention time. Besides the well-known source follower RTN, we have identified the RTN caused by varying photodiode dark current, transfer-gate and reset-gate induced sense node leakage. These four types of RTN and the dark signal shot noises dominate the noise distribution tails of CIS and non-CIS chips under test, either with or without X-ray irradiation. The effect of correlated multiple sampling (CMS) on noise reduction is studied and a theoretical model is developed to account for the measurement results.


2012 ◽  
Author(s):  
Xinqiao (Chiao) Liu ◽  
Boyd Fowler ◽  
Hung Do ◽  
Mark Jaffe ◽  
Richard Rassel ◽  
...  

Sensors ◽  
2020 ◽  
Vol 20 (1) ◽  
pp. 287
Author(s):  
Célestin Doyen ◽  
Stéphane Ricq ◽  
Pierre Magnan ◽  
Olivier Marcelot ◽  
Marios Barlas ◽  
...  

A new methodology is presented using well known electrical characterization techniques on dedicated single devices in order to investigate backside interface contribution to the measured pixel dark current in BSI CMOS image sensors technologies. Extractions of interface states and charges within the dielectric densities are achieved. The results show that, in our case, the density of state is not directly the source of dark current excursions. The quality of the passivation of the backside interface appears to be the key factor. Thanks to the presented new test structures, it has been demonstrated that the backside interface contribution to dark current can be investigated separately from other sources of dark current, such as the frontside interface, DTI (deep trench isolation), etc.


2020 ◽  
Vol 67 (1) ◽  
pp. 268-277 ◽  
Author(s):  
Alexandre Le Roch ◽  
Cedric Virmontois ◽  
Philippe Paillet ◽  
Jeffrey H. Warner ◽  
Jean-Marc Belloir ◽  
...  

2016 ◽  
Vol 63 (1) ◽  
pp. 42-48 ◽  
Author(s):  
Yang Xu ◽  
Xiaoliang Ge ◽  
Albert J. P. Theuwissen

2019 ◽  
Vol 7 ◽  
pp. 227-238 ◽  
Author(s):  
Calvin Yi-Ping Chao ◽  
Thomas M.-H. Wu ◽  
Shang-Fu Yeh ◽  
Kuo-Yu Chou ◽  
Honyih Tu ◽  
...  

2014 ◽  
Vol 8 (1) ◽  
pp. 152-158
Author(s):  
Zhigang Zhao ◽  
Ru Wang ◽  
Jianheng Huang ◽  
Jinchuan Guo ◽  
Hanben Niu

Fiber optic taper (FOP) array coupled digital x-ray detector can be an ideal choice for large area high resolution x-ray imaging, but its data acquisition system is a challenge, for the reasons such as restrictions of hardware design due to the shape of the FOP array, long distance control requirement in x-ray environment, and arrangement of data transmission sequence among multiple CCD/CMOS image sensors. A FPGA and ARM based data acquisition system for 2×2 FOP array coupled x-ray detector was implemented in this paper. We have finished all the procedures involving the data acquisition system, including hardware and PCB design, FPGA design, ARM and PC software development, and so on. The data acquisition process operates in parallel during parameters setting, 4 CMOS image sensors (LUPA-4000) timing driving, and DDR2 SDRAM data buffering, while it works in series when sending data from each FPGA to ARM and from ARM to PC. Experimental results showed that the data acquisition system worked steadily, and whole images of a custom-built calibration plate were achieved by butting images of the four individual CMOS image sensors’ in visible light test environment. This work could be a valuable foundation for realization of all kinds of FOP array coupled digital x-ray detectors.


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