Role of intrinsic band-gap states for the energy level alignment at weakly interacting organic-conductor interfaces: gap states versus band dispersion in pentacene thin films

2007 ◽  
Author(s):  
Nobuo Ueno ◽  
Satoshi Kera ◽  
Hirohiko Fukagawa
Keyword(s):  
Thin Films ◽  
Energy Level ◽  
Band Gap ◽  
Organic Conductor ◽  
Versus Band ◽  
Weakly Interacting ◽  
Band Dispersion ◽  
Energy Level Alignment ◽  
Gap States

The role of gap states on energy level alignment at an α-NPD/HAT(CN) 6 charge generation interface

2015 ◽  
Vol 24 ◽  
pp. 120-124 ◽  
Author(s):  
Jin-Peng Yang ◽  
Fabio Bussolotti ◽  
Yan-Qing Li ◽  
Xiang-Hua Zeng ◽  
Satoshi Kera ◽  
...  
Keyword(s):  
Energy Level ◽  
Charge Generation ◽  
Energy Level Alignment ◽  
Gap States

The role of gap states in the energy level alignment at the organic–organic heterojunction interfaces

2012 ◽  
Vol 14 (41) ◽  
pp. 14127 ◽  
Author(s):  
Shu Zhong ◽  
Jian Qiang Zhong ◽  
Hong Ying Mao ◽  
Jia Lin Zhang ◽  
Jia Dan Lin ◽  
...  
Keyword(s):  
Energy Level ◽  
Energy Level Alignment ◽  
Gap States

Role of Surface Band Gap Widening in Cu(In, Ga)(Se, S)2 Thin-Films for the Photovoltaic Performance of ZnO/CdS/Cu(In, Ga)(Se, S)2 Heterojunction Solar Cells

2003 ◽  
Vol 763 ◽  
Author(s):  
U. Rau ◽  
M. Turcu
Keyword(s):  
Thin Films ◽  
Surface Layer ◽  
Solar Cells ◽  
Fermi Level ◽  
Band Gap ◽  
Photovoltaic Performance ◽  
Heterojunction Solar Cells ◽  
Fermi Level Pinning ◽  
Device Efficiency

AbstractNumerical simulations are used to investigate the role of the Cu-poor surface defect layer on Cu(In, Ga)Se2 thin-films for the photovoltaic performance of ZnO/CdS/Cu(In, Ga)Se2 heterojunction solar cells. We model the surface layer either as a material which is n-type doped, or as a material which is type-inverted due to Fermi-level pinning by donor-like defects at the interface with CdS. We further assume a band gap widening of this layer with respect to the Cu(In, Ga)Se2 bulk. This feature turns out to represent the key quality of the Cu(In, Ga)Se2 surface as it prevents recombination at the absorber/CdS buffer interface. Whether the type inversion results from n-type doping or from Fermi-level pinning is only of minor importance as long as the surface layer does not imply a too large number of excess defects in its bulk or at its interface with the normal absorber. With increasing number of those defects an n-type layer proofs to be less sensitive to material deterioration when compared to the type-inversion by Fermi-level pinning. For wide gap chalcopyrite solar cells the internal valence band offset between the surface layer and the chalcopyrite appears equally vital for the device efficiency. However, the unfavorable band-offsets of the ZnO/CdS/Cu(In, Ga)Se2 heterojunction limit the device efficiency because of the deterioration of the fill factor.

Study of energy level alignment at weakly interacting small organic molecular thin film interfaces: The validity of classical model from inorganics

2019 ◽  
Vol 125 (3) ◽  
pp. 035301 ◽  
Author(s):  
Jinpeng Yang ◽  
Liwen Cheng ◽  
Xiaoshuang Shen ◽  
Hui He ◽  
Xianghua Zeng
Keyword(s):  
Thin Film ◽  
Energy Level ◽  
Classical Model ◽  
Weakly Interacting ◽  
Energy Level Alignment

The Role of Work Function and Band Gap in Resistive Switching Behaviour of ZnTe Thin Films

2017 ◽  
Vol 47 (2) ◽  
pp. 1620-1629 ◽  
Author(s):  
Srinu Rowtu ◽  
L. D. Varma Sangani ◽  
M. Ghanashyam Krishna
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Band Gap ◽  
Resistive Switching ◽  
Switching Behaviour ◽  
Znte Thin Films

scholarly journals Low-density band-gap states in pentacene thin films probed with ultrahigh-sensitivity ultraviolet photoelectron spectroscopy

2009 ◽  
Vol 95 (18) ◽  
pp. 183303 ◽  
Author(s):  
Tomoki Sueyoshi ◽  
Hirohiko Fukagawa ◽  
Masaki Ono ◽  
Satoshi Kera ◽  
Nobuo Ueno
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Low Density ◽  
Density Band ◽  
Ultrahigh Sensitivity ◽  
Gap States

scholarly journals Activity of Sub‐Band Gap States in Ferroelectric Pb(Zr 0.2 Ti 0.8 )O 3 Thin Films

2020 ◽  
Vol 6 (4) ◽  
pp. 1900966
Author(s):  
Niranjan Ramakrishnegowda ◽  
Yeseul Yun ◽  
David S. Knoche ◽  
Lutz Mühlenbein ◽  
Xinye Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Gap States

Role of Al in engineering the optical band gap and PL emission intensity properties of CdO thin films grown by SILAR method

2022 ◽  
Vol 123 ◽  
pp. 111921
Author(s):  
Harun Güney ◽  
Demet İskenderoğlu ◽  
Muhammed Emin Güldüren ◽  
Sibel Morkoç Karadeniz
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Emission Intensity ◽  
Optical Band Gap ◽  
Silar Method ◽  
Pl Emission ◽  
Cdo Thin Films

Effects of Processing Conditions on the Work Function and Energy-Level Alignment of NiO Thin Films

2010 ◽  
Vol 114 (46) ◽  
pp. 19777-19781 ◽  
Author(s):  
Mark T. Greiner ◽  
Michael G. Helander ◽  
Zhi-Bin Wang ◽  
Wing-Man Tang ◽  
Zheng-Hong Lu
Keyword(s):  
Thin Films ◽  
Energy Level ◽  
Work Function ◽  
Processing Conditions ◽  
Energy Level Alignment
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