Investigation of cross-sectional potential distribution in GaN-based field effect transistors by Kelvin probe force microscopy

2008 ◽  
Author(s):  
M. Kaneko ◽  
A. Hinoki ◽  
A. Suzuki ◽  
T. Araki ◽  
Y. Nanishi
Keyword(s):  
Field Effect ◽  
Potential Distribution ◽  
Field Effect Transistors ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Cross Sectional ◽  
Force Microscopy

POTENTIAL PROFILE MEASUREMENT OF CARBON NANOTUBE FETs BASED ON THE ELECTROSTATIC FORCE DETECTION

NANO ◽  
2008 ◽  
Vol 03 (01) ◽  
pp. 51-54 ◽  
Author(s):  
YUKI OKIGAWA ◽  
TAKEO UMESAKA ◽  
YUTAKA OHNO ◽  
SHIGERU KISHIMOTO ◽  
TAKASHI MIZUTANI
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Potential Distribution ◽  
Field Effect Transistors ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Profile Measurement ◽  
Kelvin Probe ◽  
Force Detection ◽  
Force Microscopy

We have measured the potential distribution on carbon nanotube (CNT) field-effect transistors (FETs) using electrostatic force microscopy (EFM) and Kelvin probe force microscopy (KFM). Clearer potential profiles were obtained by EFM than by KFM. When the CNT-FET is in the ON state, the EFM image shows uniform potential distribution along the CNT. In contrast, when the CNT-FET is in the OFF state, nonuniform potential image with dark spots are obtained. The dark spots can be attributed to the defects in the CNTs.

Surface Potential Measurement of Carbon Nanotube Field-Effect Transistors Using Kelvin Probe Force Microscopy

2007 ◽  
Vol 46 (4B) ◽  
pp. 2496-2500 ◽  
Author(s):  
Takeo Umesaka ◽  
Hirofumi Ohnaka ◽  
Yutaka Ohno ◽  
Shigeru Kishimoto ◽  
Koichi Maezawa ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Surface Potential ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Potential Measurement ◽  
Force Microscopy

Tracking speed bumps in organic field-effect transistors via pump-probe Kelvin-probe force microscopy

2015 ◽  
Vol 118 (24) ◽  
pp. 244502 ◽  
Author(s):  
J. Murawski ◽  
T. Mönch ◽  
P. Milde ◽  
M. P. Hein ◽  
S. Nicht ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Kelvin Probe Force Microscopy ◽  
Organic Field Effect Transistors ◽  
Kelvin Probe ◽  
Pump Probe ◽  
Force Microscopy

Measurement of Cross-Sectional Potential of InAlAs/InGaAs Layered Structures in Vacuum by Kelvin Probe Force Microscopy

2003 ◽  
Vol 42 (Part 1, No. 4A) ◽  
pp. 1751-1752 ◽  
Author(s):  
Tengfeng Xie ◽  
Kei-ichiro Kumada ◽  
Shigeru Kishimoto ◽  
Takashi Mizutani
Keyword(s):  
Layered Structures ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Cross Sectional ◽  
Force Microscopy
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