scholarly journals Micro-Raman Scattering of Nanoscale Silicon in Amorphous and Porous Silicon

2017 ◽  
Vol 231 (9) ◽  
Author(s):  
Sangeetha Periasamy ◽  
Sasirekha Venkidusamy ◽  
Ragavendran Venkatesan ◽  
Jeyanthinath Mayandi ◽  
Joshua Pearce ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Nanostructures ◽  
Micro Raman Spectroscopy ◽  
Nanostructured Silicon ◽  
Quartz Substrates

Abstract:The size effect of nanoscale silicon in both amorphous and porous silicon was investigated with micro-Raman spectroscopy. Silicon nanostructures in amorphous silicon were deposited on quartz substrates by plasma enhanced chemical vapor deposition (PECVD) with deposition powers of 15, 30 and 50 W. Micro-Raman spectra of the nanostructured silicon show the T

DIAMOND SYNTHESIS WITH HOT FILAMENT CHEMICAL VAPOR DEPOSITION (HFCVD) IN THE PRESENCE OF IRON

2000 ◽  
Vol 14 (01) ◽  
pp. 7-13 ◽  
Author(s):  
C. H. LI ◽  
G. Z. WANG ◽  
Y. LIAO ◽  
F. YE ◽  
R. C. FANG
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Surface Morphology ◽  
Thin Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Synthesis ◽  
Micro Raman Spectroscopy ◽  
Hot Filament

A new substrate pretreatment for the synthesis of diamond with hot filament chemical vapor deposition (HFCVD) is reported. The substrate was prepared by galvanizing a thin layer of iron on porous silicon. Sphere-like diamond was observed, whose surface was embedded by certain surface morphology of diamond. Further more, several high diamond towers were detected, which consist of dozens of diamond spheres. SEM and Micro-Raman spectroscopy confirm the result.

The Structural Properties of Carbon Nanotubes Grown on Porous Silicon-Based Materials by Thermal Chemical Vapor Deposition Method

2013 ◽  
Vol 686 ◽  
pp. 28-32 ◽  
Author(s):  
Fadzilah Suhaimi Husairi ◽  
S.A.M. Zobir ◽  
Mohamad Rusop ◽  
Saifolah Abdullah
Keyword(s):  
Carbon Nanotubes ◽  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Micro Raman Spectroscopy ◽  
Porous Silicon Substrate ◽  
Align Carbon Nanotubes

In this paper, carbon nanotubes on porous silicon substrate were developed in order to get high quality nanotubes for various kind of application. CNTs were deposited on porous silicon nanostructures (PSiN) at 750 0C on porous silicon by using double-furnace thermal chemical vapor deposition technique. Align carbon nanotubes with diameters of 15 to 30 nm were successfully synthesized on a porous silicon substrate. In this system, carbon nanotubes were grown directly on the p-type porous silicon surface at 750 0C for a total time of 30 minutes. The samples were characterized using field emission scanning electron microscopy and micro-Raman spectroscopy. Align carbon nanotubes (ACNTs) bundle with uniform diameter (~20 nm) were found grown on porous silicon at certain area. Based on micro-Raman spectroscopy result, the peak of silicon at ~520 nm and peak of carbon nanotube (around 1 300 to 1 600 nm) was detected.

The Structural Properties of Carbon Nanotubes Grown on Porous Silicon-Based Materials by Thermal Chemical Vapor Deposition Method

2013 ◽  
Vol 667 ◽  
pp. 477-481
Author(s):  
F.S. Husairi ◽  
S.A.M. Zobir ◽  
Mohamad Rusop Mahmood ◽  
Saifollah Abdullah
Keyword(s):  
Carbon Nanotubes ◽  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Micro Raman Spectroscopy ◽  
Porous Silicon Substrate ◽  
Align Carbon Nanotubes

In this paper, carbon nanotubes on porous silicon substrate were developed in order to get high quality nanotubes for various kind of application. CNTs were deposited on porous silicon nanostructures (PSiN) at 750 0C on porous silicon by using double-furnace thermal chemical vapor deposition technique. Align carbon nanotubes with diameters of 15 to 30 nm were successfully synthesized on a porous silicon substrate. In this system, carbon nanotubes were grown directly on the p-type porous silicon surface at 750 0C for a total time of 30 minutes. The samples were characterized using field emission scanning electron microscopy and micro-Raman spectroscopy. Align carbon nanotubes (ACNTs) bundle with uniform diameter (~20 nm) were found grown on porous silicon at certain area. Based on micro-Raman spectroscopy result, the peak of silicon at ~520 nm and peak of carbon nanotube (around 1 300 to 1 600 nm) was detected.

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